2006
DOI: 10.1016/j.physb.2005.09.039
|View full text |Cite
|
Sign up to set email alerts
|

Variation of the energy gap of the SbSI crystals at ferroelectric phase transition

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

1
18
0

Year Published

2008
2008
2023
2023

Publication Types

Select...
7
1

Relationship

1
7

Authors

Journals

citations
Cited by 21 publications
(19 citation statements)
references
References 9 publications
1
18
0
Order By: Relevance
“…The main properties of SbSI have been reviewed in a few monographs [23][24][25][26][27]. However, the properties of these materials are still investigated [28][29][30][31]. The properties of the 1D SbSI remain little known.…”
Section: Introductionmentioning
confidence: 99%
“…The main properties of SbSI have been reviewed in a few monographs [23][24][25][26][27]. However, the properties of these materials are still investigated [28][29][30][31]. The properties of the 1D SbSI remain little known.…”
Section: Introductionmentioning
confidence: 99%
“…[5], though its relation with the energy gap variation was not disclosed. The more detailed study of the energy gap variation was analyzed on the basis of calculations using the empirical pseudo-potential method for the paraelectric and ferroelectric phase [6]. The electronic energy spectrum in range +5 to -5 eV in both phases of SbSI was calculated [7] with particular attention paid to the choice of the chemical bonding model of the crystals.…”
Section: Introductionmentioning
confidence: 99%
“…Figure 1 shows experimental exponential absorption edge slope σ/kT dependence on the temperature (curve 1) when K = 150cm −1 and E⊥ c. Slope dependence on the temperature for E|| c we have discussed in Ref. [9]. For the comparison isoabsorption E K dependence on temperature is shown in the same figure (curve 2).…”
Section: Resultsmentioning
confidence: 88%
“…This method in more detail is described in Ref. [9]. It is worth to mention that exponential absorption edge expressed in a form of K = K 0 exp[−σ (E 0 − E)/kT ] contains parameters describing electron phonon interaction which we would like to show are very important in AFP.…”
Section: Methodsmentioning
confidence: 99%