Variety Transformation of Compound at GaSb Surface under Sulfur Passivation

Lin, Chuing L.; Su, Yan Kuin; Than, Soe; Li, Wen L.

doi:10.1143/jjap.37.l1543

Cited by 27 publications

(22 citation statements)

References 14 publications

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“…6,7 Here, we study the effects of HCl treatment on the capacitance-voltage characteristics ͑C-V͒ and the surface chemistry of n-type and p-type GaSb͑100͒ MOS capacitors fabricated with both atomic-layer-deposited ͑ALD͒ and plasma enhanced ALD ͑PEALD͒ Al 2 O 3 dielectrics. PEALD was employed to reduce the thermal budget of dielectric deposition, particularly important for antimonide based semiconductors.…”

mentioning

confidence: 99%

Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3

et al. 2010

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mentioning

confidence: 99%

Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3

et al. 2010

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“…b). The increase in carbon contamination after treatment with the aqueous solution of ammonium sulfide and decrease after treatment with ammonium sulfide in 2‐propanol was observed before on the GaSb(100) surface .…”

Section: Discussionmentioning

confidence: 79%

Superior electronic passivation of n-GaP(100) surface using alcoholic as compared to aqueous ammonium sulfide solution: Wet processing studied with synchrotron photoelectron spectroscopy

Lebedev

Mayer

2014

Phys. Status Solidi A

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The chemical composition and the electronic properties of the n‐GaP(100) surface treated with ammonium sulfide dissolved in water versus 2‐propanol is investigated using synchrotron‐radiation photoemission spectroscopy (SXPS). Chemical composition and electronic structure of the passivated surfaces vary in dependence of the solvent used. The valence band maximum and the core level binding energies of the sulfide layers measured in the most surface sensitive mode are found at 1.0 and 0.75–0.9 eV higher binding energies using 2‐propanol versus aqueous solution. This flattening of bands actually is related to photovoltage induced by synchrotron radiation. The strong source induced photovoltage obtained after treatment with 2‐propanol solution indicates a high quality surface as surface recombination is largely suppressed due to passivation of surface gap states. In addition the carbon contamination is reduced three times using alcoholic while it is increased by a factor of 1.4 with aqueous solution.

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“…8. The O1s peak in GaSb overlaps with the Sb3d 5/2 peak (see Table S1) [59], making deconvolution of oxygen specific species difficult. As such, it is excluded from the discussion here.…”

Section: Xps For Aptes Silane Layersmentioning

confidence: 99%

Use of 3-aminopropyltriethoxysilane deposited from aqueous solution for surface modification of III-V materials

Knorr

Williams

Baril

et al. 2014

Applied Surface Science

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Focal plane arrays of strained layer superlattices (SLSs) composed of InAs/GaSb are excellent candidates for infrared imaging, but one key factor limiting their utility is the lack of a surface passivation technique capable of protecting the mesa sidewall from degradation. Along these lines, we demonstrate the use of aqueous 3-aminopropyl triethoxysilane (APTES) deposited as a surface functionalizing agent for subsequent polymer passivation on InAs and GaSb surfaces following a HCl/citric acid procedure to remove the conductive oxide In 2 O 3. Using atomic force microscopy, variable angle spectroscopic ellipsometry, X-ray photoelectron spectroscopy (XPS), near-edge X-ray absorption fine structure (NEXAFS), and modeling with density functional theory (DFT), we demonstrate that APTES films can successfully be deposited on III-V substrates by spin coating and directly compare these films to those deposited on silicon substrates. The HCl/citric acid surface preparation treatment is particularly effective at removing In 2 O 3 without the surface segregation of In oxides observed from use of HCl alone. However, HCl/citric acid surface treatment method does result in heavy oxidation of both Ga and Sb, accompanied by segregation of Ga oxide to the surface. Deposited APTES layer thickness did not depend on the substrate choice, and thicknesses between 1 and 20nm were obtained for APTES solution concentrations ranging from 0.1 to 2.5 vol%. XPS results for the N1s band of APTES showed that the content of ionic nitrogen was high (~50%) for the thinnest films (~1nm), and decreased with increasing film thickness. These results indicate that APTES can indeed be used to form a silane surface layer to cover III-V materials substrates. Such APTES silane layers may prove useful in surface passivation of these materials alone, or as surface functionalizing agents for subsequent covalent binding with polymer overlayers like polyimide.

show abstract

Variety Transformation of Compound at GaSb Surface under Sulfur Passivation

Cited by 27 publications

References 14 publications

Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3

Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3

Superior electronic passivation of n-GaP(100) surface using alcoholic as compared to aqueous ammonium sulfide solution: Wet processing studied with synchrotron photoelectron spectroscopy

Use of 3-aminopropyltriethoxysilane deposited from aqueous solution for surface modification of III-V materials

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