Various thermal parameters investigation of 3C-SiC nanoparticles at the different heating rates

Huseynov, Elchin; Naghiyev, T. G.

doi:10.1007/s00339-022-05265-x

Cited by 21 publications

(8 citation statements)

References 46 publications

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“…When compared to other printed thermistors recently reported in literature (Table 2), the 30 % SiC thermistors exhibit a comparable TCR coefficient over such a wide operational temperature range. Both SiC particles and Kapton ® are chemically inert [79], bio-compatible [80] and resistant to ultra high temperatures [81]. These properties combined with the simplicity and flexibility of our SiC thermistors allow them to accurately detect temperature variations in critical applications such as medicine, agriculture, aerospace and chemical production.…”

Section: Thermistor Performancementioning

confidence: 99%

All Screen Printed and Flexible Silicon Carbide NTC Thermistors for Temperature Sensing Applications

Wadhwa,

Guerrero,

Gratuze

et al. 2024

Preprint

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In this study, Silicon Carbide (SiC) nano-particle based serigraphic printing inks were formulated to fabricate highly sensitive and wide temperature range SiC printed thermistors. Initially, commercial silver ink was screen printed to fabricate inter-digitated electrodes (IDE’s) onto flexible Kapton® substrate via screen printing. Thermistor inks with different weight ratios of SiC nano- particles dispersed in polyimide resin matrix were fabricated. The SiC-polyimide temperature sensing inks were screen printed atop the IDE structures to form fully printed thermistors and encapsulated with a adhesive backed polyimide film for humidity inhibition. The high temperature tolerance of the Kapton® allowed the the sensors to be tested over a wide temperature range form 25◦C to 170◦C. The printed SiC thermistors exhibit excellent repeatability and stability over 15 hours of continuous operation. Optimal device performance was achieved with 30 wt.% SiC-polyimide ink. We report highly sensitive devices with a temperature coefficient of Resistance (TCR) of -0.556 %/◦C, a thermal coefficient of 502 K (β-index) and an activation energy of 0.08 eV which are comparable with printed thermistors previous reported. Further, the thermistor demonstrates an accuracy of ±1.35◦C which is well within the range offered by commercially available high sensitivity thermistors. SiC thermistors exhibit a small 6.5% drift due to changes in relative humidity between 10-90 %RH and a 4.2 % drift in baseline resistance after 100 cycles of aggressive bend testing at a 40°angle. The use of commercially available low cost materials, simplicity of design and fabrication techniques coupled with the chemical inertness of the Kapton® substrate and SiC nanoparticles paves the way to use all-printed SiC thermistors towards a wide range of applications where temperature monitoring is vital for optimal system performance.

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Section: Thermistor Performancementioning

confidence: 99%

All Screen Printed and Flexible Silicon Carbide NTC Thermistors for Temperature Sensing Applications

Wadhwa,

Guerrero,

Gratuze

et al. 2024

Preprint

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“…Titanium carbide, like other materials at this scale, showcases unique functional attributes and distinctive physical properties [15][16][17]. Considering these inherent characteristics of nanomaterials, our research endeavors encompass a comprehensive investigation into the effects of ionizing irradiation on diverse types of nanomaterials [18][19][20][21][22][23][24][25][26][27][28][29]. The considerable specific surface area of nanomaterials can give rise to a discernible difference in surface heat transport, influencing various physical processes, and particularly exerting a noteworthy impact on thermophysical phenomena.…”

Section: Introductionmentioning

confidence: 99%

Study of the entropy and enthalpy of gamma irradiated TiC nanoparticles

Hakhiyeva

2024

UNEC j. eng. appl. sci.

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The thermal characteristics of nanocrystalline titanium carbide (TiC) particles were systematically compared before and after gamma irradiation through the application of Differential Scanning Calorimetry (DSC) spectroscopy. Utilizing experimental findings, the Gibbs energy of titanium carbide nanoparticles was ascertained within the temperature range spanning from 300 to 1270 K. The investigation of potential phase transitions in nanoparticles and the amorphization processes induced by gamma radiation was investigated employing the Differential Thermal Analysis (DTA) methodology. The enthalpy and entropy of the system comprising nanocrystalline 3C-SiC particles were computed both before and after exposure to gamma irradiation, with theoretical calculations corroborated through comparison with experimental outcomes. The values derived from experimental results for all thermophysical parameters were compared both before and after exposure to gamma radiation.

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“…Two theoretical guidelines for the class mechanism explain the evolution mechanism of 3C-SiC plastic deformation. Elchin M et al [ 12 , 13 ] studied the change in the surface of 3C-SiC particles with temperature and the heating rate, determined the specific heat capacity and Gibbs free energy at different heating rates, which has important reference significance for the field of 3C-SiC thermal processing, and studied the nanoindentation of Cu/Au thin films at different temperatures by the deposition method and ideal modeling method based on lattice constant, then visualized and analyzed the lattice structure based on open software Ovito. It was found that the hardness of the film weakened with the increase in temperature.…”

Section: Introductionmentioning

confidence: 99%

Molecular Dynamics Simulation Analysis of Damage and Expansion Process of Nanoindentation Single-Crystal 3C-SiC Carbide Specimens at Different Temperature

Ning

Zhong

et al. 2023

Nanomaterials

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The molecular dynamics method was used to analyze the influence of simulated temperature on the damage expansion process of the 3C-SiC sample under nano-indentation loading in order to study the influence of temperature on the internal damage and expansion mechanism of the 3C-SiC single crystal sample further during the nano-indentation loading process. A simulation test platform for diamond indenter indentation was established. The process of stress and strain distribution, dislocation evolution, dislocation expansion and potential energy change were analyzed, combined with the radial distribution function and load displacement curve. The influence of temperature on the 3C-SiC material was discussed. The variation trend of the potential energy-step curve is basically the same at the temperatures of 0 K, 300 K, 600 K and 900 K. The difference in strain distribution was characterized by the influence of temperature on stress intensity, expansion direction and type. The microcosmic manifestation is the significant difference in the dislocation slip at low temperature. In the process of dislocation evolution and expansion, dislocation climbs at room temperature and increases at high temperature, which is closely related to energy release. This study has certain guiding significance for investigating the internal damage difference and temperature effect of the 3C-SiC sample.

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Various thermal parameters investigation of 3C-SiC nanoparticles at the different heating rates

Cited by 21 publications

References 46 publications

All Screen Printed and Flexible Silicon Carbide NTC Thermistors for Temperature Sensing Applications

All Screen Printed and Flexible Silicon Carbide NTC Thermistors for Temperature Sensing Applications

Study of the entropy and enthalpy of gamma irradiated TiC nanoparticles

Molecular Dynamics Simulation Analysis of Damage and Expansion Process of Nanoindentation Single-Crystal 3C-SiC Carbide Specimens at Different Temperature

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