2015
DOI: 10.1016/j.nanoso.2015.05.002
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Varying photoluminescence emission of CdS nanoparticles in aqueous medium: A comparative study on effect of surfactant structure

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Cited by 10 publications
(4 citation statements)
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“…In contrast, after t = 50 min, the broad band in the range of 400–600 nm covered the solvent signal at ∼430 nm during the reaction progress, evolving to the formation of a main emission band at ∼460 nm overlapped with a second one at ∼540 nm. 20 This behaviour indicates once more a polydispersed product formation, similar as observed for experiments II and III explained above. The emission bands at ∼460 nm and ∼540 nm grow at the same rate until approximately 120 min (Fig.…”
Section: Resultssupporting
confidence: 79%
See 1 more Smart Citation
“…In contrast, after t = 50 min, the broad band in the range of 400–600 nm covered the solvent signal at ∼430 nm during the reaction progress, evolving to the formation of a main emission band at ∼460 nm overlapped with a second one at ∼540 nm. 20 This behaviour indicates once more a polydispersed product formation, similar as observed for experiments II and III explained above. The emission bands at ∼460 nm and ∼540 nm grow at the same rate until approximately 120 min (Fig.…”
Section: Resultssupporting
confidence: 79%
“…S3, ESI†). 19,20 Although the addition of the SSP solution was completed after 2 min, the intensities of these bands increased gradually until cooling started ( t ≈ 125 min), indicating the continuous product formation. A strong decrease of the luminescence intensity was caused by the temperature quenching effect at 100 °C, especially evidenced by the increase in emission intensity during cooling at t > 125 min.…”
Section: Resultsmentioning
confidence: 99%
“…Notably, two emission bands were observed for the rod- and flower-like CdS crystallites. The peaks of emission bands centered at approximately 500 and 527 nm corresponded to the near band-edge emission of the CdS crystallites [ 26 ]. Crystal defect-related emission bands of CdS were reported; the emission bands centered at approximately 540–650 nm were attributed to the shallow trap engendered by surface states or the recombination of holes in valence band electrons with deeply trapped S 2− vacancies in CdS (V + S ) [ 27 ].…”
Section: Resultsmentioning
confidence: 99%
“…On the other hand, the low-energy bands were interpreted as being due to radiative recombination involving shallow and deep traps. Some of the PL bands were tentatively ascribed to surface (or interface) related recombination [ 23 27 ].…”
Section: Discussionmentioning
confidence: 99%