“…In contrast, after t = 50 min, the broad band in the range of 400–600 nm covered the solvent signal at ∼430 nm during the reaction progress, evolving to the formation of a main emission band at ∼460 nm overlapped with a second one at ∼540 nm. 20 This behaviour indicates once more a polydispersed product formation, similar as observed for experiments II and III explained above. The emission bands at ∼460 nm and ∼540 nm grow at the same rate until approximately 120 min (Fig.…”
Section: Resultssupporting
confidence: 79%
“…S3, ESI†). 19,20 Although the addition of the SSP solution was completed after 2 min, the intensities of these bands increased gradually until cooling started ( t ≈ 125 min), indicating the continuous product formation. A strong decrease of the luminescence intensity was caused by the temperature quenching effect at 100 °C, especially evidenced by the increase in emission intensity during cooling at t > 125 min.…”
The high stability, high availability, and wide size-dependent bandgap energy of sulphidic semiconductor nanoparticles (NPs) render them promising for applications in optoelectronic devices and solar cells. However, the tunability of...
“…In contrast, after t = 50 min, the broad band in the range of 400–600 nm covered the solvent signal at ∼430 nm during the reaction progress, evolving to the formation of a main emission band at ∼460 nm overlapped with a second one at ∼540 nm. 20 This behaviour indicates once more a polydispersed product formation, similar as observed for experiments II and III explained above. The emission bands at ∼460 nm and ∼540 nm grow at the same rate until approximately 120 min (Fig.…”
Section: Resultssupporting
confidence: 79%
“…S3, ESI†). 19,20 Although the addition of the SSP solution was completed after 2 min, the intensities of these bands increased gradually until cooling started ( t ≈ 125 min), indicating the continuous product formation. A strong decrease of the luminescence intensity was caused by the temperature quenching effect at 100 °C, especially evidenced by the increase in emission intensity during cooling at t > 125 min.…”
The high stability, high availability, and wide size-dependent bandgap energy of sulphidic semiconductor nanoparticles (NPs) render them promising for applications in optoelectronic devices and solar cells. However, the tunability of...
“…Notably, two emission bands were observed for the rod- and flower-like CdS crystallites. The peaks of emission bands centered at approximately 500 and 527 nm corresponded to the near band-edge emission of the CdS crystallites [ 26 ]. Crystal defect-related emission bands of CdS were reported; the emission bands centered at approximately 540–650 nm were attributed to the shallow trap engendered by surface states or the recombination of holes in valence band electrons with deeply trapped S 2− vacancies in CdS (V + S ) [ 27 ].…”
CdS crystallites with rod- and flower-like architectures were synthesized using a facile hydrothermal growth method. The hexagonal crystal structure of CdS dominated the growth mechanisms of the rod- and flower-like crystallites under specific growth conditions, as indicated by structural analyses. The flower-like CdS crystallites had a higher crystal defect density and lower optical band gap value compared with the rod-like CdS crystallites. The substantial differences in microstructures and optical properties between the rod- and flower-like CdS crystallites revealed that the flower-like CdS crystallites exhibited superior photoactivity, and this performance could be further enhanced through appropriate thermal annealing in ambient air. A postannealing procedure conducted in ambient air oxidized the surfaces of the flower-like CdS crystallites and formed a CdO phase. The formation of heterointerfaces between the CdS and CdO phases mainly contributed to the improved photoactivity of the synthesized flower-like CdS crystallites.
“…On the other hand, the low-energy bands were interpreted as being due to radiative recombination involving shallow and deep traps. Some of the PL bands were tentatively ascribed to surface (or interface) related recombination [ 23 – 27 ].…”
A series of solid nanocomposites containing CdS nanoparticles in polymeric matrix with varied conditions on the interface particle/polymer was fabricated and studied by photoluminescence (PL) and optically detected magnetic resonance (ODMR) methods. The results revealed interface-related features in both PL and ODMR spectra. The revealed paramagnetic centers are concluded to be involved in the processes of photo-excited carriers relaxation.
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