VBIC95: An improved vertical, IC bipolar transistor model

McAndrew, Colin C.; Seitchik, J.A.; Bowers, D.F.; Dunn, Martin L.; Foisy, M.; Getreu, Ian; McSwain, M.; Moinian, S.; Parker, James R.; Wijnen, P. van; Wagner, L.

doi:10.1109/bipol.1995.493891

Cited by 40 publications

(8 citation statements)

References 9 publications

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“…For every incremental voltage rise with widening depletion region, charges are removed and this change in minority carrier charges can be attributed to a capacitance. Thus, the capacitance can be defined as (6) where represents the change of depletion region with voltage. Combining (5) and (6), the overall depletion capacitance can be expressed as (7) The charge decays with time due to recombination, diffusion, and carrier sweep out.…”

Section: Improved Modelmentioning

confidence: 99%

Charge-control modeling of power bipolar junction transistors

Vijayalakshmi

Trivdei²,

Shenai

2000

IEEE Trans. Power Electron.

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This paper describes an improved lumped circuit model of power bipolar junction transistors (BJTs) that can predict the turn-off fall time to a greater accuracy than currently available models. Though the existing models simulate the storage time and delay time to a good accuracy, the fall time performance is neglected. This is because the existing models do not account for the charge decay due to recombination. The model presented in this paper is based on the charge dynamics of the device. The charge dynamics is explained in detail using simulation results from an advanced two-dimensional (2-D) device and circuit simulator. Based on a physical understanding of the charge dynamics, this model is implemented to incorporate the charge decay due to recombination to account for the current tail during turn-off. The lumped-circuit model is implemented in PSPICE using the existing quasisaturation model along with controlled sources. To validate the model, the device was subjected to hard-as well as soft-switching conditions (zero current switching and zero voltage switching). The modeled results are observed to have a good match with measured results.

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Section: Improved Modelmentioning

confidence: 99%

Charge-control modeling of power bipolar junction transistors

Vijayalakshmi

Trivdei²,

Shenai

2000

IEEE Trans. Power Electron.

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“…Before presenting our enhancement proposal, VBIC model will be introduced. The VBIC model was developed specifically as a replacement for the SPG, de facto standard bipolar model in 1995 by a group of representatives from the integrated circuit and computeraided design industries [8,9]. Fig.…”

Section: Avalanche Modeling Enhancementmentioning

confidence: 99%

“…In the more advanced bipolar models such as VBIC [8,9], Mextram [10], the avalanche model is based on the well-known Chynoweth's empirical law and local electric field derivation [11]. In HICUM model [12,13], the avalanche model was derived similar to that of Mextram on the basis that breakdown is caused by the maximum local electric field, but more depends on the device geometric parameter [14].…”

Section: Introductionmentioning

confidence: 99%

Characterization and modeling of avalanche multiplication in HBTs

Lin¹,

Chen

Zhou

et al. 2000

SPIE Proceedings

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An accurate modeling of avalanche breakdown of HBTs in compact bipolar transistor models for circuit simulation is presented. Based on various device electrical characteristics that are grouped into three classes, a modified VBIC avalanche multiplication model is proposed. By simply replacing one constant avalanche model parameter with current linear dependence, the new model predicts well broad behaviors of breakdown from weak avalanche up into high injections.

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“…To predict the HBT characteristics, several physics-based HBT nonlinear models, such as VBIC (McAndrew et al, 1995;Wei, Gering, & Tkachenko, 2005), HICUM (Rein & Schroter, 1987;Stubing & Rein, 1987), MEXTRAM (Degraaff & Kloosterman, 1985), FBH (Rudolph, Doerner, Beilenhoff, & Heymann, 2000) and Agilent (Iwamoto, Root, Scott, & Cognata, 2003), have been reported, and many integrated circuit design tools have already incorporated those models.…”

Section: Introductionmentioning

confidence: 99%