VCSEL-Based Data Links

Eng, Julie Sheridan; Kocot, Chris

doi:10.1016/b978-0-12-396958-3.00014-7

Cited by 5 publications

(1 citation statement)

References 75 publications

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“…In particular, GaAs is the standard for <1 μm near-infrared optoelectronic applications. [1][2][3][4] Recently however, there have been interest in extending GaAs optoelectronics to the 1.2 and 1.6 μm bands though the use of novel quantum nanostructures namely, metamorphic quantum wells 5,6) and quantum dots. [7][8][9][10][11] This trend has been driven by the relative maturity of GaAs material system as well as the practical and fundamental limitations of InP-based optoelectronics.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence of pre-growth treatment induced below-bandgap states in GaAs

Roca

Fukui

Mizuno

et al. 2020

Jpn. J. Appl. Phys.

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Below-bandgap states induced by pre-epitaxial growth treatments in semi-insulating (s.i.) GaAs has previously been investigated by photoluminescence (PL). Various electronic states giving rise to near-infrared PL peaks are generated through processes such as annealing or buffer growth that are standard for epitaxial growth of InAlGaAs structures on (001) GaAs substrates. These states often overlap with those from InGaAs structures, not only complicating the interpretation but also altering the electronic properties of the devices. The present study extends the investigation to the case of doped n-and p-type (001) GaAs substrates. These substrates are widely utilized in various optoelectronic applications, and therefore information on below bandgap states are important to distinguish the desired electronic states from the pre-growth treatment-induced defect states. It was found that the behavior of n-and p-type substrates subjected to pre-growth treatment are different from that of s.i. GaAs.

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Section: Introductionmentioning

confidence: 99%

Photoluminescence of pre-growth treatment induced below-bandgap states in GaAs

Roca

Fukui

Mizuno

et al. 2020

Jpn. J. Appl. Phys.

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Below-bandgap photoluminescence from GaAs substrates induced by pre-MBE-growth treatments

et al. 2019

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We report the observation of below-GaAs-bandgap photoluminescence (PL) emission from semi-insulating GaAs substrates subjected to thermal annealing during the standard pre-MBE-growth processes. The below-GaAs-bandgap luminescence from defects were investigated using a combination of PL techniques including below-gap-excitation (BGE) and backside illuminated (BI) PL. Using BGE and BI PL, defects deep within the substrates were probed, and their spatial positions along the sample were analyzed. A PL peak at 1000 nm was observed after pre-bake annealing at 300°C, and further peaks at 905, 940 and 1150 nm were found after oxide desorption annealing at 600°C. These are attributed to the Ga-vacancy related defect, Ga-vacancy-complex defect, As-vacancy defect, and InGaAs states, respectively. This is the first report of the formation of such optically-active defects after annealing of GaAs at moderate temperature ranges (≤600°C), providing guidelines to distinguish desired electronic states for device applications from those that arise from defects which often confuse, and also degrade the device performances.

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Reliability testing for silicon photonics and optoelectronics (Invited)

Herrick

2024

2024 IEEE International Reliability Physics Symposium (IRPS)

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VCSEL-Based Data Links

Cited by 5 publications

References 75 publications

Photoluminescence of pre-growth treatment induced below-bandgap states in GaAs

Photoluminescence of pre-growth treatment induced below-bandgap states in GaAs

Below-bandgap photoluminescence from GaAs substrates induced by pre-MBE-growth treatments

Reliability testing for silicon photonics and optoelectronics (Invited)

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