VCSELs based on arrays of sub-monolayer InGaAs quantum dots

Blokhin, S. A.; Maleev, N. A.; Kuzmenkov, A. G.; Shernyakov, Yu. M.; Novikov, I. I.; Gordeev, N. Yu.; Dyudelev, V. V.; Sokolovskiĭ, G. S.; Kuchinskiĭ, V. I.; Kulagina, M. M.; Maximov, M. V.; Ustinov, V. M.; Kovsh, A. R.; Mikhrin, S. S.; Ledentsov, N. N.

doi:10.1134/s1063782606050186

Cited by 10 publications

(3 citation statements)

References 11 publications

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“…The gain maximum redshift is about seven times faster than the cavity mode, which confirms the strong thermal dependence of the gain-cavity detuning. The perfect spectral alignment of the cavity mode with the gain maximum ( λ(T ) = 0) occurs at a temperature of T * G ∼ 311 K. However, if the detuning is estimated based on the temperature dependence of the wavelength of the EL peak, the zero detuning is reached at a temperature of 280 K, which cannot agree with the efficient operation of the investigated VCSEL at elevated temperatures [10]. Note that the temperature corresponding to the minimum threshold current T I does not coincide with the temperature of zero gaincavity detuning T * G , as is commonly assumed for the VCSEL.…”

Section: Resultsmentioning

confidence: 89%

“…In spite of the fact that the dielectric or undoped semiconductor distributed Bragg reflectors (DBRs) and intra-cavity contacts can considerably minimize the free carrier absorption losses in present QD VCSELs [8], such VCSEL design is much more complicated as compared to that of commercial 0.85 µm QW VCSEL with doped Al x Ga 1−x As DBRs. We have recently demonstrated the possibility of using high surface density InGaAs QD arrays formed by sub-monolayer (SML) deposition as an active region for high-performance oxide-confined 0.98 µm VCSELs [10]. In spite of the remarkable progress achieved for QD VCSELs, the performance and scaling of characteristics of any type of VCSEL are seriously limited by their thermal behaviour.…”

Section: Introductionmentioning

confidence: 99%

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The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots

Blokhin¹,

Сахаров²,

Maleev³

et al. 2007

Semicond. Sci. Technol.

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The laser characteristics of 0.98 µm vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots (QDs) were studied in a broad temperature range. Devices demonstrated low internal optical losses, high differential efficiency and relatively small resistances due to the QD active region together with an optimal design of doped distributed Bragg reflectors. It is found that the temperature dependence of threshold current and differential efficiency depends not only on the temperature sensitivity of the active region, but also on the lineshape of the gain curve and spectral misalignment between the gain maximum and cavity mode. A simple method of estimation of gain-cavity detuning has been proposed.

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Section: Resultsmentioning

confidence: 89%

Section: Introductionmentioning

confidence: 99%

The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots

Blokhin¹,

Сахаров²,

Maleev³

et al. 2007

Semicond. Sci. Technol.

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“…10) Recently, single-mode InGaAs SML QD VCSELs with a room-temperature output power as high as 4 mW have been demonstrated. 11) However, single-mode operation of the InGaAs SML QD VCSEL with PhC is still yet to be realized. In this paper, we report our results for InGaAs QD PhC-VCSELs in the 990 nm range.…”

Section: Introductionmentioning

confidence: 99%

Characteristics of Single-Mode InGaAs Submonolayer Quantum-Dot Photonic-Crystal Vertical-Cavity Surface-Emitting Lasers

Yang

Hsu

Lai

et al. 2006

Jpn. J. Appl. Phys.

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An InGaAs submonolayer (SML) quantum-dot photonic-crystal vertical-cavity surface-emitting laser (QD PhC-VCSEL) for fiber-optic applications is demonstrated for the first time. The active region of the device contains three InGaAs SML QD layers. Each of the InGaAs SML QD layers is formed by alternate depositions of InAs (<1 ML) and GaAs. A single-fundamental-mode CW output power of 3.8 mW at 28 mA has been achieved in the 990 nm range, with a threshold current of 0.9 mA. A side-mode suppression ratio (SMSR) larger than 35 dB has been demonstrated over the entire current operation range. The beam profile and near-field image study of the PhC-VCSEL indicates that the laser beam is well confined by the photonic crystal structure of the device.

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InGaAs Submonolayer Quantum-Dot Photonic-Crystal LEDs for Fiber-Optic Communications

Yang

2012

Quantum Dot Devices

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VCSELs based on arrays of sub-monolayer InGaAs quantum dots

Cited by 10 publications

References 11 publications

The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots

The impact of thermal effects on the performance of vertical-cavity surface-emitting lasers based on sub-monolayer InGaAs quantum dots

Characteristics of Single-Mode InGaAs Submonolayer Quantum-Dot Photonic-Crystal Vertical-Cavity Surface-Emitting Lasers

InGaAs Submonolayer Quantum-Dot Photonic-Crystal LEDs for Fiber-Optic Communications

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