Velocity and current determination for steadily travelling domains in semiconductors. I

Pataki, György

doi:10.1007/bf03159396

Cited by 2 publications

(4 citation statements)

References 17 publications

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“…This inconsequenee is not essential because the further calculations ate independent of the neglect of these small terms in K'. The most important results of this approximation are the neglect of x 2 term in (22) and the connection between C0 and K" given by (24'). One can see immediately that x = --~1 is a root of (25), and thus:…”

Section: A) Quasi-equilibrium Between the Valleysmentioning

confidence: 99%

“…For B ~ 0 we obtain from Eq. (29) the velocity of recombination domains which was first given in [22]:…”

Section: A) Quasi-equilibrium Between the Valleysmentioning

confidence: 99%

“…for the solutions of Eqs. (22), (23) these functions have no singularities. This point requires, however, further investigations.…”

Section: Acta Physir Academias Scien~iarum Hungaricae 25 1968mentioning

confidence: 99%

“…The method is a generalization of that used in paper [22] (hereafter referred to as I) for veloeity and eurrent determination of slowly moving recombination domains*. Namely, starting from the wavelike (Riemann-type) solution of the non-linear problem [15], [17], the charge densities in the low-and high-mobility states ~i (i = 1, 2) are expressed in terms of electrical field E and its derivatives, or more precisely Qi = Qi(E, E', E"), where the means differentiation with respect to z = x --Uot.…”

Section: Introductionmentioning

confidence: 99%

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Velocity and current determination for steadily travelling domains in semiconductors. II

Pataki

1968

Acta Physica

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The velocity and current determination method proposed in Part Iis applied for the WATKINS--GuNN effect.Two cases ate considered: a) the case of quasi-equilibrium between high-and lowrnobility states (instantaneous transitions) and b) the case of non-instantaneous transitions.For the former case the total current Js and the domain velocity u 0 ate determined separately also including field-dependent diffusion coefficients. For the latter case, ah algebraic equation system is derived for Js and u 0 in terms of "domain shape parameters" S i which characterize the domain shape around the neutrality point.The analysis of the resulting velocity expressions shows that the GUNN domains, in contrast to the slowly moving recombination domains, ate insensitive to the domain shape, at least in GaAs.

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Section: A) Quasi-equilibrium Between the Valleysmentioning

confidence: 99%

“…For B ~ 0 we obtain from Eq. (29) the velocity of recombination domains which was first given in [22]:…”

Section: A) Quasi-equilibrium Between the Valleysmentioning

confidence: 99%

“…for the solutions of Eqs. (22), (23) these functions have no singularities. This point requires, however, further investigations.…”

Section: Acta Physir Academias Scien~iarum Hungaricae 25 1968mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Velocity and current determination for steadily travelling domains in semiconductors. II

Pataki

1968

Acta Physica

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Effect of traps on steadily travelling domains in semiconductors

Pataki

1969

Acta Physica

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This paper deals with the effect of traps on the domain velocity (u0) and total current ()s) in the presenee of steadily travelling high field domains. The treatment is applieable both for the Watkins--Gunn effect and recombination instability. The calculations are earried out without linearization of the related equations, using the method proposed in [9] for the trapfree case. The assumptions used are: (i) Only transitions leading to negative differential conductivity depend on the electrie fie]d; (ii) The relaxation times of transitions between high and low mobility states ate shorter than the other characteristic times of the problem; (iii) The mobilities and diffusion coefficients are field independent; (iv) The electron concentration in the band is much lower than those of empty and filled centres.The effect of traps on the Watkins --Gunn effeet is discussed in detail and expressions for possible domain-velocity are derived. In contrast to the trap-free case the domain velocity is sensitive to the domain shape. For quadratic domains, the peak field dependente of possible domain modes is discussed.A simple analysis shows that the applicability of the model for slowly moving domains in semi-insulating GaAs cannot be definitely deeided without a knowledge of the relaxation time from low-mobility states to the traps.

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Velocity and current determination for steadily travelling domains in semiconductors. I

Cited by 2 publications

References 17 publications

Velocity and current determination for steadily travelling domains in semiconductors. II

Velocity and current determination for steadily travelling domains in semiconductors. II

Effect of traps on steadily travelling domains in semiconductors

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