1975
DOI: 10.1007/978-3-642-65993-5_7
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Verfahren der gerichteten Erstarrung

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“…Due to the relatively shallow and flat liquidus surface of the silicide phases Mo 3 Si and Mo 5 SiB 2 compared to the steep liquidus surface of the Mo SS phase, slight changes in the chemical compositions or drastically undercooled liquids during arc-melting are able to shift the phase stability and thus the eutectic growth regime out of the invariant point. As a result, a few primary crystals may occur in the microstructure and according to Kurz and Sahm [30] even secondary crystallization is possible. While the Mo-Si-B system is relatively well investigated, the situation is quite uncertain in the V-Si-B neighbor system.…”
Section: Resultsmentioning
confidence: 99%
“…Due to the relatively shallow and flat liquidus surface of the silicide phases Mo 3 Si and Mo 5 SiB 2 compared to the steep liquidus surface of the Mo SS phase, slight changes in the chemical compositions or drastically undercooled liquids during arc-melting are able to shift the phase stability and thus the eutectic growth regime out of the invariant point. As a result, a few primary crystals may occur in the microstructure and according to Kurz and Sahm [30] even secondary crystallization is possible. While the Mo-Si-B system is relatively well investigated, the situation is quite uncertain in the V-Si-B neighbor system.…”
Section: Resultsmentioning
confidence: 99%