Verfassung als Ordnungskonzept

Mayer, Franz C.; Heinig, Hans Michael; Michael, Lothar

doi:10.1515/9783110443257

Cited by 5 publications

(7 citation statements)

References 2 publications

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“…Comments: The reductase domain of NOS catalyses the reduction of cytochrome c and other redox-active dyes [322]. NADPH:O 2 oxidoreductase catalyses the formation of superoxide anion/H 2 O 2 in the absence of L-arginine and sapropterin.…”

Section: Enzymes L-arginine Turnover Dimethylarginine Dimethylaminohymentioning

confidence: 99%

The Concise Guide to PHARMACOLOGY 2015/16: Enzymes

Alexander

Fabbro

Kelly

et al. 2015

British J Pharmacology

545

169

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The Concise Guide to PHARMACOLOGY 2015/16 provides concise overviews of the key properties of over 1750 human drug targets with their pharmacology, plus links to an open access knowledgebase of drug targets and their ligands (www.guidetopharmacology.org), which provides more detailed views of target and ligand properties. The full contents can be found at http://onlinelibrary.wiley.com/doi/ 10.1111/bph.13354/full. G protein-coupled receptors are one of the eight major pharmacological targets into which the Guide is divided, with the others being: G protein-coupled receptors, ligand-gated ion channels, voltage-gated ion channels, other ion channels, nuclear hormone receptors, catalytic receptors and transporters. These are presented with nomenclature guidance and summary information on the best available pharmacological tools, alongside key references and suggestions for further reading. The Concise Guide is published in landscape format in order to facilitate comparison of related targets. It is a condensed version of material contemporary to late 2015, which is presented in greater detail and constantly updated on the website www.guidetopharmacology.org, superseding data presented in the previous Guides to Receptors & Channels and the Concise Guide to PHARMACOLOGY 2013/14. It is produced in conjunction with NC-IUPHAR and provides the official IUPHAR classification and nomenclature for human drug targets, where appropriate. It consolidates information previously curated and displayed separately in IUPHAR-DB and GRAC and provides a permanent, citable, point-in-time record that will survive database updates. Conflict of interestThe authors state that there are no conflicts of interest to declare.

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Section: Enzymes L-arginine Turnover Dimethylarginine Dimethylaminohymentioning

confidence: 99%

The Concise Guide to PHARMACOLOGY 2015/16: Enzymes

Alexander

Fabbro

Kelly

et al. 2015

British J Pharmacology

545

169

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“…Based on the previous discussion of the pros and cons of MOSFET and TFET 8T SRAM cells and realizing that mixing TFET and MOSFET devices is manufacturally possible since the process of TFET device is compatible with CMOS process [5], Fig. 6 shows the proposed mixed TFET-MOSFET 8T SRAM cell and corresponding read/write paths.…”

Section: Mixed Tfet-mosfet 8t Sram Cellmentioning

confidence: 99%

“…Tunnel FET (TFET) device, with the band-to-band tunneling as the major current transport mechanism, enables steeper than 60mV/dec subthreshold swing and is a promising device to replace MOSFET device for ultra-low voltage/power operation [1]- [5]. However, the asymmetric source/drain design and transport mechanism result in uni-directional current conduction [6], which severely impacts the pass-gate based circuits and SRAMs [6]- [9].…”

Section: Introductionmentioning

confidence: 99%

Ultra-low voltage mixed TFET-MOSFET 8T SRAM cell

Chen

Fan

et al. 2014

Proceedings of the 2014 International Symposium on Low Power Electronics and Design

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In this work, we propose a mixed TFET-MOSFET 8T SRAM cell comprising MOSFET cross-coupled inverters, dedicated TFET read stack and TFET write access transistors. Exploiting both the merits of TFET and MOSFET devices, the proposed SRAM cell provides significant improvement in SRAM stability, Vmin and performance. The proposed cell is evaluated and compared with the conventional MOSFET 8T cell and pure TFET 8T cell using mixedmode TCAD simulations. The results indicate that the proposed mixed TFET-MOSFET cell topology is viable for ultra-low voltage operation.

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“…In contrast with the SOI Z-RAM® there is no need of impact ionization to create/inject the hole charge in the device body, the holes being injected by the forward-bias p+i junction, which significantly improves the device reliability. Measurements on FDSOI TFET devices as reported in [1,2] were performed at elevated temperatures and used to calibrate the non-local band-to-band (B2B) tunnelling model in Sentaurus TCAD [3]. The retention characteristics of the proposed memory cell is simulated at an elevated temperature of 85°C and is shown to be not degrading at higher temperature as is the case in conventional capacitorless DRAMs [4].…”

mentioning

confidence: 99%

Study of fin-tunnel FETs with doped pocket as capacitor-less 1T DRAM

Biswas

Ionescu

2014

2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S)

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In this work we propose and validate by experimentally calibrated simulations a silicon Tunnel FET(TFET) based capacitorless DRAM cell, implemented as a fully-depleted FinFET with CMOS compatible process. The devices have a conventional FinFET structure except for a p+ (for n-type TFET) doped pocket of length LPKT and doping NPKT between the intrinsic channel and the (n++) drain. This doped pocket creates a necessary condition to store holes injected from the source-to-body junction. In [1], there was a need to induce a potential well in order to store the excess charges; whereas in the present case a potential well is permanently present due to the doped pocket. The drain voltage is used as a control voltage to either fill the potential well with carriers (WRITE "1") by attracting holes from the p++ source or repel them to empty the well of carriers (WRITE "0"). In contrast with the SOI Z-RAM® there is no need of impact ionization to create/inject the hole charge in the device body, the holes being injected by the forward-bias p+i junction, which significantly improves the device reliability. Measurements on FDSOI TFET devices as reported in [1,2] were performed at elevated temperatures and used to calibrate the non-local band-to-band (B2B) tunnelling model in Sentaurus TCAD [3]. The retention characteristics of the proposed memory cell is simulated at an elevated temperature of 85°C and is shown to be not degrading at higher temperature as is the case in conventional capacitorless DRAMs [4].Introduction, principle of operation: Tunnel FETs have been recently proposed [5] as steep slope switches able to reduce the voltage operation of logic circuits below 0.2V with reduced leakage current and improved switching energy efficiency. While high-performance Tunnel FETs exploit InAs-Si heterostructures on nanowires [6], the allSi Tunnel FET family appears primarily to have a very high ION/IOFF and the lowest IOFF [7] yet fail to achieve the requirements of ION. In this paper, we further build upon [1] that showed that all-Si double-gate Tunnel FET can serve for building a new class of devices: the capacitorless Tunnel FET DRAM, where the very low IOFF is offering a major advantage for DRAM low power consumption/low refresh rate and the zero-capacitor structure a very high potential for scalability. The proposed new structure as shown in Fig. 1. Fig. 3 shows the energy band diagram of the device in Fig. 1. The doped pocket acts as a resistance to the flow of carriers between the source and the drain and the drain bias is used to control this resistance to the current flow. Transfer curves of the device in Fig. 1 was simulated for different LPKT and NPKT as shown in Fig. 2. The values LPKT = 25 nm and NPKT = 5x10 18 cm -3 were chosen to enable optimum functioning of the memory cell. Higher pocket doping results in a deeper potential well as well as a higher resistance to carrier resulting in lower currents. Lower doping on the other hand would require very high drain bias for memory operation, which is not feasible for ...

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Verfassung als Ordnungskonzept

Cited by 5 publications

References 2 publications

The Concise Guide to PHARMACOLOGY 2015/16: Enzymes

The Concise Guide to PHARMACOLOGY 2015/16: Enzymes

Ultra-low voltage mixed TFET-MOSFET 8T SRAM cell

Study of fin-tunnel FETs with doped pocket as capacitor-less 1T DRAM

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