Versatile Externally Modulated Lasers Technology for Multiple Telecommunication Applications

Abstract

This paper presents our technological approach for Externally Modulated Lasers (EMLs), based on Semi-Insulating Buried Heterostructure (SIBH) waveguide. We use Gas Source Molecular Beam Epitaxy (GSMBE) to grow the Phosphorusbased multi-quantum wells for both laser and modulator sections with butt-joint integration. The same GSMBE grows the p-doped InP claddings with low-diffusion Be dopant, leading to an accurate control of doping profiles, ensuring very steep modulator extinction curves. We present the main EML design rules and compromises, then apply them to different EMLs aiming at major telecom and datacom applications. After presenting characteristics of the standard 10 Gb/s C-band EML, we propose a 10 Gb/s EML at 1577 nm for next generation access networks, with a record high 10.5 dBm facet modulated power. Then we present high-speed EMLs up to 56 GBaud for datacenter interconnections, both in O-and C-band, aiming at very low peak-to-peak modulation voltage (< 1.2 V), high facet modulated power (> 4.4 dBm), and compatible with uncooled operation (20 to 70 °C). These results confirm the efficiency and versatility of this technological platform for EMLs in a broad range of applications.

Integration by Selective Area Growth of Multiple Semi‐Insulating Buried Heterostructure‐Distributed Feedback Lasers with Optimized Performance Over 100 nm in the O‐Band

“…[5] Such advancements have enabled the production of complex PIC solutions, such as electroabsorptionmodulated laser (EML), amplified-EML (EML-SOA), and avalanche photodiodes on the InP platform. One advantage of this platform is that by applying quaternary AlGaInAs materials [6] and semi-insulating buried heterostructures (SIBH), [7][8][9] it is possible to operate devices without active cooling.…”