Versatile Seebeck and electrical resistivity measurement setup for thin films

Abstract

A custom setup for Seebeck coefficient and electrical resistivity measurements of thin films as a function of temperature in the range of 10–300 K was developed. The Seebeck coefficient is measured using a two-probe arrangement and using either a dynamical or steady/quasi-steady differential method. The temperature differences (ΔTs) for these measurements across the samples are achieved by using resistive heaters embedded in two copper blocks. The sample is screwed to these blocks and is in pressured contact with the measurement probes. The electrical resistivity is measured with a two-probe arrangement. To verify the reliability of the developed setup, measurement tests were performed on commercial niobium foil and a specular spin valve previously studied, having obtained a great accordance (within ∼3%) between this setup’s experimental results and the reference measurements.

A Photo‐Thermoelectric Twist to Wireless Energy Transfer: Radial Flexible Thermoelectric Device Powered by a High‐Power Laser Beam

“…The evaluation of the temperature dependence (20–325 K) of S and σ of the TE film was carried out following Ferreira‐Teixeira et al. [ 68 ] procedure.…”

“…Regarding the transport properties, the roomtemperature Seebeck coefficient was measured using an in-plane homemade setup composed of two independent Cu support pillars already reported in Pires et al [44] The room-temperature electrical conductivity of the printed thermoelectric film was measured using the four-point method where a 2410-C SourceMeter from Keithley Instruments Inc. was used. The evaluation of the temperature dependence (20-325 K) of S and 𝜎 of the TE film was carried out following Ferreira-Teixeira et al [68] procedure.…”

“…To study the TE performance under extreme conditions (low temperature), the evaluation of the temperature dependence (20-325 K) of S and 𝜎 of the TE film was carried out following Ferreira-Teixeira et al procedure. [68] The results are shown in Figure 4.…”

Electronic Conduction Channels Engineered in Topological Insulator Sputtered Thin Films

“…Electronic Transport Characterization. The resistivity was measured with standard four linear contacts geometry or by using the home developed setup described 57 in a closed cycle cryostat (APD Cryogenics, Inc. System, HC-4 MK1 compressor) with a temperature range [10−300] K. Magnetoconductance measurements were carried out with four linear contacts or in a van der Pauw geometry with magnetic field perpendicular to the thin film. The measurements were performed using a cryogen-free measurement system from Cryogenic Limited and in an AC mode at 23 Hz.…”

Accelerated measurement of electrical resistivity and Seebeck coefficient for thin-layer thermoelectric materials

“…The Seebeck coefficient measurement techniques are based on differential or integral method, and their differences are shown in table 1 [29,[42][43][44]. In the differential method, the steadystate method and the quasi-steady state method are suitable for the combination of resistivity measurement methods because the temperature of sample can be kept constant.…”