Versatile silicon photodiode detector technology for scanning electron microscopy with high-efficiency sub-5 keV electron detection

Sakic, A.; Nanver, L.K.; Veen, Gerard van; Kooijman, K.; Vogelsang, P.; Scholtes, T.L.M.; Boer, Wiebe de; Wien, W.; Milosavljevic, S.; Heerkens, C. Th. H.; Knežević, Tihomir; Spee, I.

doi:10.1109/iedm.2010.5703458

Cited by 30 publications

(29 citation statements)

References 2 publications

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“…This so-called PureB technology has provided particularly impressive performance of photodiode detectors for low penetration-depth beams for which 2-nm-thick PureB-layers are reliably implemented as the front-entrance window (2)(3)(4)(5). Ideal low-leakage diode characteristics are achieved for deposition temperatures from 400ºC -700ºC, which together with the fact that the deposition is conformal and highly selective to Si, also makes PureB technology an attractive candidate for creating junctions on silicon nanowires and advanced CMOS transistors including source/drain in p-type FinFETs (6,7).…”

Section: Introductionmentioning

confidence: 99%

A Kinetic Model for Chemical-Vapor Deposition of Pure-Boron Layers from Diborane

et al. 2013

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In this paper, an analytical model is established to describe the deposition kinetics and the deposition chamber characteristics that determine the deposition rates of PureB-layers grown by chemicalvapor deposition (CVD) from diborane (B 2 H 6 ) as gas source on a non-rotating silicon wafer. The model takes into consideration the diffusion mechanism of the diborane species through the stationary boundary layer over the wafer, the gas phase processes and the related surface reactions. This model is based on a wide range of input parameters, such as initial diborane partial pressure, total gas flow, axial position on the wafer, deposition temperature, activation energy of PureB deposition from diborane, surface Hcoverage and reactor dimensions. The model's predictive capabilities have been verified by experiments performed at 700 ºC in these two different ASM CVD reactors.

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Section: Introductionmentioning

confidence: 99%

A Kinetic Model for Chemical-Vapor Deposition of Pure-Boron Layers from Diborane

et al. 2013

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“…Fig. 11 shows the deposition rate of the PureB in the 10×10 mm 2 Si openings at different distances from the "reference" area for the three samples. For comparison, the PureB deposition rate in the "reference" area for sample LW-SiOpen is included.…”

Section: Resultsmentioning

confidence: 99%

“…This pattern dependency must be taken into account when applying the PureB deposition to devices where the boron-layer thickness is critical as, for example, in photodiodes for detecting electrons with energies below about 1 keV. 2 Significant non-uniformities can be found when window sizes are in the range of millimeters or centimeters.…”

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confidence: 99%

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Pattern Dependency and Loading Effect of Pure-Boron-Layer Chemical-Vapor Deposition

Mohammadi

Boer

Scholtes

et al. 2012

ECS J. Solid State Sci. Technol.

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The pattern dependency of pure-boron (PureB) layer chemical-vapor Deposition (CVD) is studied with respect to the correlation between the deposition rate and features like loading effects, deposition parameters and deposition window sizes. It is shown experimentally that the oxide coverage ratio and the size of windows to the Si on patterned wafers are the main parameters affecting the deposition rate. This is correlated to the gas depletion of the reactant species in the stationary/low-velocity boundary layer over the wafer. An estimation of the radius of gas depletion for Si openings and/or diffusion length of diborane in this study yield lengths in the order of centimeters, which is related to the boundary layer thickness. The deposition parameters; pressure and flow rates are optimized to minimize the pattern dependency of the PureB deposition rates. A very low standard deviation, less than 0.02, is achieved while at the same time making it independent of oxide coverage ratios and window sizes.

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“…The lower energy limit is set by the absorption in the layers above the photosensitive region, called dead layers, at the light-entrance side of the detector. An exceptionally thin dead layer of only a few nm is offered by PureB photodiodes that have been extensively used for soft X-ray detection (the 13.5 nm extreme ultraviolet (EUV) wavelength) as well as vacuum UV light and low-energy electron detection down to 200 eV [21,22]. This technology is proposed here for forming the p + regions since it has been demonstrated to deliver an ideal coverage of the Si and equally good diode performance on Si surfaces created by both wet and dry etching of trenches and cavities [23,24].…”

Section: Introductionmentioning

confidence: 99%

Silicon Drift Detectors with the Drift Field Induced by PureB-Coated Trenches

2016

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Junction formation in deep trenches is proposed as a new means of creating a built-in drift field in silicon drift detectors (SDDs). The potential performance of this trenched drift detector (TDD) was investigated analytically and through simulations, and compared to simulations of conventional bulk-silicon drift detector (BSDD) configurations. Although the device was not experimentally realized, the manufacturability of the TDDs is estimated to be good on the basis of previously demonstrated photodiodes and detectors fabricated in PureB technology. The pure boron deposition of this technology allows good trench coverage and is known to provide nm-shallow low-noise p + n diodes that can be used as radiation-hard light-entrance windows. With this type of diode, the TDDs would be suitable for X-ray radiation detection down to 100 eV and up to tens of keV energy levels. In the TDD, the drift region is formed by varying the geometry and position of the trenches while the reverse biasing of all diodes is kept at the same constant voltage. For a given wafer doping, the drift field is lower for the TDD than for a BSDD and it demands a much higher voltage between the anode and cathode, but also has several advantages: it eliminates the possibility of punch-through and no current flows from the inner to outer perimeter of the cathode because a voltage divider is not needed to set the drift field. In addition, the loss of sensitive area at the outer perimeter of the cathode is much smaller. For example, the simulations predict that an optimized TDD geometry with an active-region radius of 3100 µm could have a drift field of 370 V/cm and a photo-sensitive radius that is 500-µm larger than that of a comparable BSDD structure. The PureB diodes on the front and back of the TDD are continuous, which means low dark currents and high stability with respect to leakage currents that otherwise could be caused by radiation damage. The dark current of the 3100-µm TDD will increase by only 34% if an interface trap concentration of 10 12 cm −2 is introduced to approximate the oxide interface degradation that could be caused during irradiation. The TDD structure is particularly well-suited for implementation in multi-cell drift detector arrays where it is shown to significantly decrease the cross-talk between segments. The trenches will, however, also present a narrow dead area that can split the energy deposited by high-energy photons traversing this dead area. The count rate within a cell of a radius = 300 µm in a multi-cell TDD array is found to be as high as 10 Mcps.

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Versatile silicon photodiode detector technology for scanning electron microscopy with high-efficiency sub-5 keV electron detection

Cited by 30 publications

References 2 publications

A Kinetic Model for Chemical-Vapor Deposition of Pure-Boron Layers from Diborane

A Kinetic Model for Chemical-Vapor Deposition of Pure-Boron Layers from Diborane

Pattern Dependency and Loading Effect of Pure-Boron-Layer Chemical-Vapor Deposition

Silicon Drift Detectors with the Drift Field Induced by PureB-Coated Trenches

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