Versatile vapor phase deposition approach to cesium tin bromide materials CsSnBr3, CsSn2Br5 and Cs2SnBr6

Bonomi, Sara; Patrini, M.; Bongiovanni, Giovanni; Malavasi, Lorenzo

doi:10.1039/d0ra04680a

Cited by 24 publications

(18 citation statements)

References 27 publications

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“…To date, no vapor phase approaches have been used to prepare Cs 3 Bi 2 (I 1– x Br x ) 9 films. In addition, RF-magnetron sputtering has scarcely been used for perovskite films notwithstanding its huge potential for scale-up, providing stoichiometry control, good morphology, and high crystallinity and quality of deposited films, as we demonstrated recently. , Together with the structural and optical property characterization of the deposited films we report a significant photocatalytic activity in organic pollutant degradation combined with excellent water stability of the prepared materials. In the following, we start discussing the two end-members of the solid solution, namely Cs 3 Bi 2 Br 9 and Cs 3 Bi 2 I 9 , and then moving to the investigation of the mixed compositions.…”

Section: Introductionmentioning

confidence: 65%

“…To conclude, this paper demonstrates the efficiency of sputtering in preparing thin films of all-inorganic lead-free Bi-based perovskites which are of huge interest for the wide community of photovoltaics, optoelectronics, and more recently, photocatalysis. As we already demonstrated for other metal halide perovskites, sputtering seems to be a method to be extended to several systems to further boost the scale-up of perovskite-based technology, in particular for all-inorganic systems which face relevant problems in wet-chemistry depositions. − …”

Section: Discussionmentioning

confidence: 98%

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Optical and Structural Property Tuning in Physical Vapor Deposited Bismuth Halides Cs₃Bi₂(I_1–xBr_x)₉ (0 ≤ x ≤ 1)

et al. 2021

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Crystalline films of lead-free all-inorganic Cs 3 Bi 2 X 9 (X = Br, I) perovskites have been deposited by radio frequency (RF)-magnetron sputtering providing high-quality, single-phase films as confirmed by structural, morphological, and optical property characterization. Progressive tuning of crystal structure characteristics and optical absorbance has been achieved in mixed Br/I phases Cs 3 Bi 2 (I 1– x Br x ) 9 (0 ≤ x ≤ 1), highlighting a shift of the band gap from about 2.0 eV for Cs 3 Bi 2 I 9 to 2.64 eV for Cs 3 Bi 2 Br 9 . X-ray diffraction and Raman scattering allowed defining the range of alloyed compositions where single-phase compositions are found. Finally, preliminary photocatalytic activity tests on the degradation of methylene blue provided solid data indicating the future possible exploitation of Bi-based perovskite derivative materials as active photocatalysts.

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Section: Introductionmentioning

confidence: 65%

Section: Discussionmentioning

confidence: 98%

Optical and Structural Property Tuning in Physical Vapor Deposited Bismuth Halides Cs₃Bi₂(I_1–xBr_x)₉ (0 ≤ x ≤ 1)

et al. 2021

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“… a true m normalx 0em true̅ values are computed from the harmonic mean over directions and light/heavy bands for the effective masses. Values of >1 are given to one decimal place. b Experimental band gap values taken from refs , , , and for Cs 2 SnCl 6 , refs , , , and − for Cs 2 SnBr 6 , refs , , , , , , and for Cs 2 SnI 6 , refs and for Cs 2 TiCl 6 , refs , , , , , , , and for Cs 2 TiBr 6 , and refs and for Cs 2 TiI 6 . …”

mentioning

confidence: 99%

“… b Experimental band gap values taken from refs , , , and for Cs 2 SnCl 6 , refs , , , and − for Cs 2 SnBr 6 , refs , , , , , , and for Cs 2 SnI 6 , refs and for Cs 2 TiCl 6 , refs , , , , , , , and for Cs 2 TiBr 6 , and refs and for Cs 2 TiI 6 . …”

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confidence: 99%

Frenkel Excitons in Vacancy-Ordered Titanium Halide Perovskites (Cs₂TiX₆)

Kavanagh

Savory

Liga

et al. 2022

J. Phys. Chem. Lett.

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Low-cost, nontoxic, and earth-abundant photovoltaic materials are long-sought targets in the solar cell research community. Perovskite-inspired materials have emerged as promising candidates for this goal, with researchers employing materials design strategies including structural, dimensional, and compositional transformations to avoid the use of rare and toxic elemental constituents, while attempting to maintain high optoelectronic performance. These strategies have recently been invoked to propose Ti-based vacancyordered halide perovskites (A 2 TiX 6 ; A = CH 3 NH 3 , Cs, Rb, or K; X = I, Br, or Cl) for photovoltaic operation, following the initial promise of Cs 2 SnX 6 compounds. Theoretical investigations of these materials, however, consistently overestimate their band gaps, a fundamental property for photovoltaic applications. Here, we reveal strong excitonic effects as the origin of this discrepancy between theory and experiment, a consequence of both low structural dimensionality and band localization. These findings have vital implications for the optoelectronic application of these compounds while also highlighting the importance of frontier-orbital character for chemical substitution in materials design strategies.

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“…PSCs device was coated with an additional 30 mol% SnF 2 on the MASnIBr 2 perovskite layer, the cell has PCE of 3.7%, a higher quality perovskite film, and less carrier recombination. Hartmann et al, 85 studied the effect of SnF 2 on CsSnBr 3, they confirmed that 20 mol% SnF 2 suppressed the oxidation of Sn 2+ . Most tin‐based PSCs now employ SnF 2 to attain excellent photovoltaic performance 75,85 …”

Section: Discussionmentioning

confidence: 90%

CsPbI ₃ lead and CsSnI ₃ lead‐free perovskite materials for solar cell device

Gamal

Alruqi

Rabia

2022

Intl J of Energy Research

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Summary Long‐term operational photovoltaic devices might be produced utilizing perovskites made of inorganic cesium lead halide, which have excellent thermal endurance in the air. Lead perovskite reaches power conversion efficiency (PCE) reaches 23% in 2022. The limitation of α‐CsPbI3 (cubic phase) that has an appropriate bandgap is its volatility with time. As a result, using HPbI3 instead of PbI2 in a single‐step deposition process, exceptionally stable α‐CsPbI3 may be generated in dry air. Most notably, using CsPbI3 as an interfacial layer on perovskite after 3000 h of dry air storage, non‐capsulated devices maintain approximately 90% of their initial PCE. Although much work has gone into improving the stability and then efficiency of perovskite solar cells (PSCs) controlling the interfacial charge transfer in PSCs with interface engineering can assist achieve high efficiency and stability. α‐CsPbI3 quantum dots (QDs) can increase the PSCs properties by functioning as a bridge over the hole transport material and in contact with the perovskite film layer. By depositing inorganic CsPbI3 QDs with excellent moisture stability onto the perovskite layer and the interface engineering layer, the PCE increased from 15.17% to 23% in 2018 and 2022, respectively. The toxicity of lead, on the other hand, makes a huge challenge for the spreading of lead PSCs in a wide application. As a result, researchers are looking toward replacing Pb with equivalent metals based on first‐principles predictions with sufficient band gap, optical, and electrical properties. CsSnI3 represents replaceable materials with good dispersion and high uniform formation. Using Sn‐based PSCs have PCE values of 14.81% in 2022, but using CsSnI3 as an interfacial layer in the PSCs, the efficiency reaches 20%. The other halide Cl−, Br−, and F− can be partially inserted in this molecule or replace I− anion, this led to a variety of product results for the prepared PSC, but this efficiency is less than using only I− ions. After a big study, CsSnI3 is a promising interfacial for the PSC with a lifetime of >1000 h. Now, scientists and searchers use all possibilities for increasing the device efficiency to be applicable in the industrial field. This is carried out by controlling the size of CsSnI3 particles that are used as an interfacial layer, at the other hand, controlling the size will be promising for reaching the desired efficiency and stability for the PSCs device.

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Versatile vapor phase deposition approach to cesium tin bromide materials CsSnBr₃, CsSn₂Br₅ and Cs₂SnBr₆

Abstract: We report on the application of RF-magnetron sputtering to deposit, by using a single type of target, three different materials in the form of thin films within the Cs–Sn–Br compositional range, namely, CsSnBr3, CsSn2Br5 and Cs2SnBr6.

Cited by 24 publications

References 27 publications

Optical and Structural Property Tuning in Physical Vapor Deposited Bismuth Halides Cs₃Bi₂(I_1–xBr_x)₉ (0 ≤ x ≤ 1)

Optical and Structural Property Tuning in Physical Vapor Deposited Bismuth Halides Cs₃Bi₂(I_1–xBr_x)₉ (0 ≤ x ≤ 1)

Frenkel Excitons in Vacancy-Ordered Titanium Halide Perovskites (Cs₂TiX₆)

CsPbI ₃ lead and CsSnI ₃ lead‐free perovskite materials for solar cell device

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Versatile vapor phase deposition approach to cesium tin bromide materials CsSnBr3, CsSn2Br5 and Cs2SnBr6

Abstract: We report on the application of RF-magnetron sputtering to deposit, by using a single type of target, three different materials in the form of thin films within the Cs–Sn–Br compositional range, namely, CsSnBr3, CsSn2Br5 and Cs2SnBr6.

Cited by 24 publications

References 27 publications

Optical and Structural Property Tuning in Physical Vapor Deposited Bismuth Halides Cs3Bi2(I1–xBrx)9 (0 ≤ x ≤ 1)

Optical and Structural Property Tuning in Physical Vapor Deposited Bismuth Halides Cs3Bi2(I1–xBrx)9 (0 ≤ x ≤ 1)

Frenkel Excitons in Vacancy-Ordered Titanium Halide Perovskites (Cs2TiX6)

CsPbI 3 lead and CsSnI 3 lead‐free perovskite materials for solar cell device

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Versatile vapor phase deposition approach to cesium tin bromide materials CsSnBr₃, CsSn₂Br₅ and Cs₂SnBr₆

Optical and Structural Property Tuning in Physical Vapor Deposited Bismuth Halides Cs₃Bi₂(I_1–xBr_x)₉ (0 ≤ x ≤ 1)

Optical and Structural Property Tuning in Physical Vapor Deposited Bismuth Halides Cs₃Bi₂(I_1–xBr_x)₉ (0 ≤ x ≤ 1)

Frenkel Excitons in Vacancy-Ordered Titanium Halide Perovskites (Cs₂TiX₆)

CsPbI ₃ lead and CsSnI ₃ lead‐free perovskite materials for solar cell device