Organic thin-fi lm transistors (OTFTs) have attracted much attention due to their potential applications in high-value, low-cost electronic devices, including displays, sensors, radio-frequency identifi cation components, and e-papers. [1][2][3] Current research in OTFT materials is focused primarily on the design and synthesis of conjugated organic compounds and polymers that are environmentally stable and capable of carrier transport. Several conjugated organic compounds and polymers have been developed with promising carrier mobilities, comparable to that of amorphous silicon. [4][5][6] To exploit such materials in a wider range of practical applications, high-performance inverters, which are the building blocks of integrated circuits (ICs), must be developed. Complementary metal-oxide semiconductor (CMOS) technology is desirable for the preparation of ICs because it provides straightforward circuit design, good noise margins, low power consumption, and robust operation. Organic CMOS technology requires the use of p-and n-type transistors on the same substrate; however, the separate vacuum-deposition of p-and n-type semiconductors increases the complexity of the circuit fabrication process. [ 7,8 ] To overcome this problem, researchers have explored several strategies, including: i) ambipolar OTFTs featuring symmetric or asymmetric source and drain electrodes for single organic semiconductors; [9][10][11][12] ii) bilayer structures consisting of hole-and electron-transporting organic compounds; [13][14][15][16] and iii) blending two organic semiconductors with different polarities to eliminate the need to pattern the p-and n-channel semiconductors in separation regions. [17][18][19][20] In a single-material confi guration, the effi cient injection of both holes and electrons is the key factor affecting the performance of ambipolar OTFTs. Improved carrier mobility can be achieved by lowering the barrier between the energy levels of the metal and those of the highest occupied molecular orbital (HOMO) of the organic semiconductor for hole transport, and of the lowest unoccupied molecular orbital (LUMO) for electron transport. Most organic semiconductors have a wide band gap (ca. 2-3 eV), resulting in a mismatch between the work function of the electrode and the organic semiconductor for at least one of the carriers. Although devices featuring asymmetric electrodes could circumvent this drawback, the preparation of such a device demands an additional deposition step. Therefore, several research groups have investigated the use of a bilayer structure, with carrier mobility of electrons and holes reaching as Shiau-Shin Cheng , Peng-Yi Huang , Mohan Ramesh , Hsiu-Chieh Chang , Li-Ming Chen , Chia-Ming Yeh , Chun-Lin Fung , Meng-Chyi Wu , Chung-Chi Liu , Choongik Kim ,* Hong-Cheu Lin , Ming-Chou Chen ,* and Chih-Wei
Solution-Processed Small-Molecule Bulk Heterojunction Ambipolar Transistors