Vertical and Smooth Etching of InP by Cl₂/Xe Inductively Coupled Plasma

Abstract

We have demonstrated anisotropic and smooth etching of InP by an inductively coupled plasma (ICP) using Cl2/Xe at high substrate temperatures. We investigated the etching characteristics by varying the substrate temperature, gas pressure, Cl2 flow rate and rf power. Vertical and smooth dry etching of InP was achieved under a low dc bias of -80 V. The ICP etching process is an effective low-damage dry-etching technique for microfabrication of InP-based optoelectronic devices.

Single-Cell Isolation and Size Sieving Using Microenclosure Array for Microbial Analysis

“…(11)(12)(13) In addition, we used an InP wafer as a base material of the microenclosure array for combination with optical devices as discussed in the last chapter. We used polystyrene beads of 1 and 3 μm diameters to confirm the efficiency of the proposed structure.…”

Tunable hollow optical waveguides and their applications for photonic integrated circuits

“…8 has been proposed [2]. Stripes with different widths are patterned by photolithography on two substrates and a trench is formed by dry etching [23]. Subsequently, reflectors such as dielectric multilayered reflectors are formed on the etched surfaces.…”

Room Temperature Inductively Coupled Plasma Etching of InP-Based Semiconductors Using Cl2/N2 and Cl2/N2/Ar Mixtures

“…The vertical sidewall profile and smooth surface obtained with the addition of N2 are attributed to the nitridation of In and P as well as the reduction of Cl-radical density that results in suppresion of PCIx formation and desorption. The nitridation by products such as InN also help to passivate the etched sidewall and bottom surface [5].…”