Vertical band-to-band tunneling based non-volatile memory with high-K gate stack and stable hysteresis characteristics up to 400K

Biswas, Arnab; Tomar, Saurabh; Ionescu, Adrian M.

doi:10.1109/drc.2016.7548493

2016 74th Annual Device Research Conference (DRC) 2016

DOI: 10.1109/drc.2016.7548493

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Vertical band-to-band tunneling based non-volatile memory with high-K gate stack and stable hysteresis characteristics up to 400K

Arnab Biswas

Saurabh Tomar

Adrian M. Ionescu

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Vertical band-to-band tunneling based non-volatile memory with high-K gate stack and stable hysteresis characteristics up to 400K

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