Vertical Bridgman growth and annealing effect of Bi doped ZnSe single crystal

Abstract

In order to prepare p-type ZnSe, bismuth (Bi) as an acceptor dopant was doped into ZnSe single crystal by vertical Bridgman method. Photoluminescence (PL) spectra measured at 4.2 K on as-grown crystal showed the strong shallow donor-acceptor pair (D Bi emission relatively increased. From the dependence of PL spectra on excitation light intensity and the temperature, the acceptor activation energy and deep donor level were estimated about 103 meV and 34 meV, respectively.

Behaviors of group Va elements in ZnSe

“…The experimental process and estimating method in detail can be found in Refs. [6,15,16]. Table 1 summarizes the ionization energies of N, P, Sb and Bi as substitution acceptors and the deep donor complexes in ZnSe.…”