Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

Zhang, Yuhao; Liu, Zhihong; Tadjer, Marko J.; Sun, Min; Piedra, Daniel; Hatem, C.; Anderson, Travis J.; Luna, Lunet E.; Nath, Anindya; Koehler, Andrew D.; Okumura, Hironori; Hu, Jie; Zhang, Xu; Gao, Xiang; Feigelson, Boris N.; Hobart, Karl D.; Palacios, Tomás

doi:10.1109/led.2017.2720689

Cited by 148 publications

(72 citation statements)

References 28 publications

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“…The integrated SBD in this work was benchmarked against state-of-the-art vertical SBDs on silicon, sapphire and GaN substrates in Fig. 5, revealing state-of-the-art performance compared to vertical GaN-on-Si SBDs [17], [18], [27][28][29][30][31][32][33][34][35][36][37][38]. The V BR of the integrated MOSFET-SBD can be significantly improved: 1.…”

Section: Resultsmentioning

confidence: 86%

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Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

Liu

Khadar

Matioli

2018

IEEE Electron Device Lett.

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1 Abstract-We demonstrate for the first time the monolithic integration of vertical GaN MOSFETs with freewheeling Schottky barrier diodes (SBD), based on a 6.7-μm-thick n-p-n heterostructure grown on 6-inch silicon substrates by metal organic chemical vapor deposition. The anode of the SBD is integrated in the source pad of the MOSFET and the cathode is directly connected to the MOSFET drain through the bottom n + -GaN layer, eliminating the need of any metal wire interconnection. This monolithic integration scheme offers reduced footprint, minimized parasitic components and simplified packaging. The integrated MOSFET-SBD showed enhancement-mode operation with a threshold voltage of 3.9 V, an on/off ratio of over 10 8 and a dramatic improvement in reverse conduction, without degradation in on-state performance from the integration of the SBD. The integrated GaN-on-Si vertical SBD exhibited excellent performance, with a specific on-resistance of 1.6 mΩ·cm 2 , a turn-on voltage of 0.76 V, an ideality factor of 1.5, along with a breakdown voltage of 254 V. These results reveal the promising potential of emerging GaN vertical devices for future power converters.

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Section: Resultsmentioning

confidence: 86%

“…By employing field plate, edge termination, and guard ring technologies [32][33][34]; 4. By utilizing trench or junction SBD architecture [35][36][37][38][39]. This excellent performance shows the great potential of GaN vertical devices for future power converters.…”

Section: Resultsmentioning

confidence: 93%

Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

Liu

Khadar

Matioli

2018

IEEE Electron Device Lett.

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“…The electric field distribution at -1000V along the vertical cutline in the trench is shown in Figure 7c. Zhang et al [76] also reported a vertical GaN-JBS with Ar-implanted trench termination, achieving a BV of 500-600 V.…”

Section: Reduced Surface Field (Resurf)mentioning

confidence: 99%

“…After that, the samples were annealed at a certain condition to further improve the ohmic behavior. (Ti/Al/Ni/Au at 600-840 • C in N 2 for 20-30s [2,26,29,33,65,67,71,72]; Ti/Al/Pt/Au at 700 • C-850 • C in N 2 for 30s [5,53,54,86]; Ti/Al [19,31,37,38,68,75,76,82]; Ti/Al/Ti/Au [32,67,83,87]; Ti/Al/Au [18,81].) Then, the nickel layer is formed on ohmic contact metal by an electroplating process, as shown in Figure 11b.…”

Section: Fabrication Steps Of Vertical Gan Sbdsmentioning

confidence: 99%

Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)

et al. 2019

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Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications. This paper reviews recent progress on GaN-based vertical power SBDs, including the following sections. First, the benchmark for GaN vertical SBDs with different substrates (Si, sapphire, and GaN) are presented. Then, the latest progress in the edge terminal techniques are discussed. Finally, a typical fabrication flow of vertical GaN SBDs is also illustrated briefly.

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“…Schematic of p + well JBSD is shown in Figure 4a. Zhang et al fabricated GaN JBSD using both p + well on n channel and n + well on p channel, by ion implantation of Mg and Si into n-GaN and p-GaN respectively [52]. Both types of devices has breakdown voltages of 500 V-600 V, and the leakage current was reduced 100-fold than conventional SBD fabricated without grid structure.…”

Section: Sbd Device Fabrication and Device Structure Optimizationmentioning

confidence: 99%

GaN-Based Schottky Diode

Wang¹

2018

Disruptive Wide Bandgap Semiconductors, Related Technologies, and Their Applications

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Schottky diode, also known as Schottky barrier diode (SBD), fabricated on GaN and related III-Nitride materials has been researched intensively and extensively for the past two decades. This chapter reviews the property of GaN material, the advantage of GaN-based SBD, and the Schottky contact to GaN including current transporation theory, Schottky material selection, contact quality and thermal stability. The chapter also discusses about the GaN lateral, quasi-vertical and vertical SBDs, and AlGaN/GaN field effect SBDs: the evolution of the epitaxial structure, processing techniques and device structure. The chapter closes with challenges ahead and gives an outlook on the future development of the GaN SBDs.

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Vertical GaN Junction Barrier Schottky Rectifiers by Selective Ion Implantation

Cited by 148 publications

References 28 publications

Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

Vertical GaN-on-Si MOSFETs With Monolithically Integrated Freewheeling Schottky Barrier Diodes

Review of the Recent Progress on GaN-Based Vertical Power Schottky Barrier Diodes (SBDs)

GaN-Based Schottky Diode

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