Vertical GaN Schottky Barrier Diode With Record High Figure of Merit (1.1 GW/cm<sup>2</sup>) Fully Grown by Hydride Vapor Phase Epitaxy

Liu, Xinke; Zou, Ping; Wang, Haofan; Lin, Yuheng; Wu, Junye; Chen, Z.; Wang, Xinzhong; Huang, Shuangwu

doi:10.1109/ted.2023.3279059

Cited by 11 publications

(4 citation statements)

References 35 publications

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“…Cr and p‐Mo x Re 1‐x S 2 , as well as Ti/Al/Ni/Au and GaN, form ohmic contacts, respectively. [ 41,100 ] For testing purposes, one end of the electrode was connected to the top of the 2D material, while the other end was attached to the bottom of the GaN substrate. Impressively, this configuration yielded a remarkable reduction in the dark current, reaching an extremely low value of 0.13 nA.…”

Section: Resultsmentioning

confidence: 99%

“…This draws inspiration from prior work on vertical GaN power devices. [ 98–100 ] The electric field distribution in vertical devices is relatively uniform, enabling a more expansive current spread. Lateral heterojunction devices necessitate dry etching processes to establish contacts between different materials, which can leave lattice damage on the etched surface, introducing trap states, resulting in increased leakage current, and delaying switching rates.…”

Section: Resultsmentioning

confidence: 99%

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Vertical Van Der Waals Epitaxy of p‐Mo_xRe_1‐_Xs₂ on GaN for Ultrahigh Detectivity Uv–vis–NIR Photodetector

Jiang,

Zhou,

et al. 2023

Advanced Optical Materials

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Abstractvan der Waals (vdW) heterogeneous integration and doping engineering have emerged as crucial factors in advancing the development of functional device systems. This work presents a fully vertical 2D/3D vdW stacking p‐MoxRe1‐xS2/GaN (x = 0.10 ± 0.02) heterojunction photodetector, integrating multiple strategies for enhanced performance, such as mixed‐dimensional stacking, p‐type doping, vertical device design, and type‐II band alignment. By integrating horizontal, vertical, and quasi‐vertical devices on a Free‐standing (FS)‐GaN substrate, the vertical p‐MoxRe1‐xS2/GaN device demonstrates superior performance, including high Ilight/Idark ratio (1.48 × 106), large Responsivity (888.69 AW−1), high specific detectivity (D*) (6.13 × 1014 Jones), and fast response speed (rise/decay time of 181 ms/259 ms). Moreover, the spectral response encompasses the ultraviolet (UV), visible, and near‐infrared (NIR) regions through energy band integration and bandgap modulation. This design surpasses previous devices, highlighting the potential of highly sensitive and micro‐integrated optoelectronic devices enabled by vertical vdW heterogeneous integration.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Vertical Van Der Waals Epitaxy of p‐Mo_xRe_1‐_Xs₂ on GaN for Ultrahigh Detectivity Uv–vis–NIR Photodetector

Jiang,

Zhou,

et al. 2023

Advanced Optical Materials

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“…A number of studies have been carried out to address these issues. In terms of GaN epitaxial growth, vertical GaN-based SBDs fabricated by homogeneous epitaxy of high-quality GaN drift layers on GaN substrates have achieved the highest BFOM of 1.1 GW cm −2 in vertical GaN devices [96]. The QST (Qromis substrate technology) substrate technology is proposed to grow GaN on Si substrate, which can reduce parasitic effects, has high thermal conductivity and the ability to grow thick buffer layers [97], and it has been proved that high performance GaN-based devices can be fabricated based on this method [98].…”

Section: Summary and Prospectsmentioning

confidence: 99%

Research progress and prospect of GaN Schottky diodes

Shao,

Zhang,

et al. 2023

J. Phys. D: Appl. Phys.

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GaN (gallium nitride), as a third-generation semiconductor (wide-band semiconductor) material, is widely used in the fabrication of power devices with an excessive breakdown voltage and a low on-resistance due to the material’s excellent properties. Starting from the three basic structures, this paper analyses and summarizes the research progress of GaN SBD (schottky barrier diode) in recent years. The design and optimization methods of GaN-based SBD are introduced from various aspects, such as anode structure, termination type, epitaxial structure and substrate. The advantages and disadvantages of GaN-based SBD of different structures and the problems in the research process are summarized, and the future application fields of GaN-based SBD devices are prospected.

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“…Several research groups have fabricated fully vertical devices on native GaN substrates or pseudo-vertical devices on foreign substrates, such as sapphire and silicon, in recent times [6][7][8][9]. However, the lack of understanding of the relationship between material processing and the underlying physics is hindering the widespread adoption of these devices.…”

Section: Introductionmentioning

confidence: 99%

Electrical Transport Characteristics of Vertical GaN Schottky-Barrier Diode in Reverse Bias and Its Numerical Simulation

et al. 2023

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We investigated the temperature-dependent reverse characteristics (JR-VR-T) of vertical GaN Schottky-barrier diodes with and without a fluorine-implanted edge termination (ET). To understand the device leakage mechanism, temperature-dependent characterizations were performed, and the observed reverse current was modeled through technology computer-aided design. Different levels of current were observed in both forward and reverse biases for the ET and non-ET devices, which suggested a change in the conduction mechanism for the observed leakages. The measured JR-VR-T characteristics of the non-edge-terminated device were successfully fitted in the entire temperature range with the phonon-assisted tunneling model, whereas for the edge-terminated device, the reverse characteristics were modeled by taking into account the emission of trapped electrons at a high temperature and field caused by Poole–Frenkel emission.

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Vertical GaN Schottky Barrier Diode With Record High Figure of Merit (1.1 GW/cm²) Fully Grown by Hydride Vapor Phase Epitaxy

Cited by 11 publications

References 35 publications

Vertical Van Der Waals Epitaxy of p‐Mo_xRe_1‐_Xs₂ on GaN for Ultrahigh Detectivity Uv–vis–NIR Photodetector

Vertical Van Der Waals Epitaxy of p‐Mo_xRe_1‐_Xs₂ on GaN for Ultrahigh Detectivity Uv–vis–NIR Photodetector

Research progress and prospect of GaN Schottky diodes

Electrical Transport Characteristics of Vertical GaN Schottky-Barrier Diode in Reverse Bias and Its Numerical Simulation

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Vertical GaN Schottky Barrier Diode With Record High Figure of Merit (1.1 GW/cm2) Fully Grown by Hydride Vapor Phase Epitaxy

Cited by 11 publications

References 35 publications

Vertical Van Der Waals Epitaxy of p‐MoxRe1‐Xs2 on GaN for Ultrahigh Detectivity Uv–vis–NIR Photodetector

Vertical Van Der Waals Epitaxy of p‐MoxRe1‐Xs2 on GaN for Ultrahigh Detectivity Uv–vis–NIR Photodetector

Research progress and prospect of GaN Schottky diodes

Electrical Transport Characteristics of Vertical GaN Schottky-Barrier Diode in Reverse Bias and Its Numerical Simulation

Contact Info

Product

Resources

About

Vertical GaN Schottky Barrier Diode With Record High Figure of Merit (1.1 GW/cm²) Fully Grown by Hydride Vapor Phase Epitaxy

Vertical Van Der Waals Epitaxy of p‐Mo_xRe_1‐_Xs₂ on GaN for Ultrahigh Detectivity Uv–vis–NIR Photodetector

Vertical Van Der Waals Epitaxy of p‐Mo_xRe_1‐_Xs₂ on GaN for Ultrahigh Detectivity Uv–vis–NIR Photodetector