Vertical GaN Schottky Barrier Diode With Record Low Contact Resistivity on N-Polarity Using Ultrathin ITO Interfacial Layer

Liu, Xinke; Wang, Haofan; Wu, Junye; Zou, Ping; Tu, Yudi; Chen, Heng; Xiong, Xinbo; Wang, Xinzhong; Han, Jiajun; Zhuang, Wenrong; Yang, Zhichao; Qiu, Feng; Chiu, Hsien‐Chin; Zhong, Ze

doi:10.1109/ted.2023.3241565

Cited by 8 publications

(1 citation statement)

References 38 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This draws inspiration from prior work on vertical GaN power devices. [ 98–100 ] The electric field distribution in vertical devices is relatively uniform, enabling a more expansive current spread. Lateral heterojunction devices necessitate dry etching processes to establish contacts between different materials, which can leave lattice damage on the etched surface, introducing trap states, resulting in increased leakage current, and delaying switching rates.…”

Section: Resultsmentioning

confidence: 99%

Vertical Van Der Waals Epitaxy of p‐Mo_xRe_1‐_Xs₂ on GaN for Ultrahigh Detectivity Uv–vis–NIR Photodetector

Jiang,

Zhou,

et al. 2023

Advanced Optical Materials

Self Cite

View full text Add to dashboard Cite

Abstractvan der Waals (vdW) heterogeneous integration and doping engineering have emerged as crucial factors in advancing the development of functional device systems. This work presents a fully vertical 2D/3D vdW stacking p‐MoxRe1‐xS2/GaN (x = 0.10 ± 0.02) heterojunction photodetector, integrating multiple strategies for enhanced performance, such as mixed‐dimensional stacking, p‐type doping, vertical device design, and type‐II band alignment. By integrating horizontal, vertical, and quasi‐vertical devices on a Free‐standing (FS)‐GaN substrate, the vertical p‐MoxRe1‐xS2/GaN device demonstrates superior performance, including high Ilight/Idark ratio (1.48 × 106), large Responsivity (888.69 AW−1), high specific detectivity (D*) (6.13 × 1014 Jones), and fast response speed (rise/decay time of 181 ms/259 ms). Moreover, the spectral response encompasses the ultraviolet (UV), visible, and near‐infrared (NIR) regions through energy band integration and bandgap modulation. This design surpasses previous devices, highlighting the potential of highly sensitive and micro‐integrated optoelectronic devices enabled by vertical vdW heterogeneous integration.

show abstract

Section: Resultsmentioning

confidence: 99%

Vertical Van Der Waals Epitaxy of p‐Mo_xRe_1‐_Xs₂ on GaN for Ultrahigh Detectivity Uv–vis–NIR Photodetector

Jiang,

Zhou,

et al. 2023

Advanced Optical Materials

Self Cite

View full text Add to dashboard Cite

show abstract

Low‐Resistivity Ti/Al/TiN/Au Ohmic Contacts to Ga‐ and N‐Face n‐GaN for Vertical Power Devices

Sadowski,

Kamiński,

Taube

et al. 2024

Physica Status Solidi (a)

View full text Add to dashboard Cite

Low‐resistivity Ohmic contacts to Gallium‐face (G‐aface) and/or Nitrogen‐face (‐Nface) n‐GaN are undoubtedly needed for high‐quality vertical power devices. Contrary to Ga‐face n‐GaN, for which the Ohmic contact formation is a well‐established process, the formation of low‐resistivity Ohmic contacts to N‐face n‐GaN is much more difficult due to the different surface properties. Despite many efforts, obtaining low‐resistivity ohmic contacts, with ρc < 1 × 10−5 Ω cm2 to N face n‐GaN, still remains difficult to achieve. Herein, results of fabrication and characterization of Ti/Al/TiN/Au ohmic contacts to Ga‐ and N‐face n‐GaN for vertical power devices are presented. The optimum annealing temperature is examined and it is noticed that Ohmic contacts to Ga‐face n‐GaN (n ≈ 5 × 1018 cm−3 , 200 nm on bulk GaN substrate) are formed after 550 °C annealing and continuously lower their ρc up to temperature of 750 °C for which ρc is ≈1.86 × 10−6 Ω cm2. Ohmic contact to N‐face n‐GaN (bulk ammonothermally grown substrate, ρ ≈ 10−3–10−2 Ω cm2) becomes quasilinear after annealing at 650 °C and becomes linear after annealing at 700 °C, reaching a minimum value of ρc 6 × 10−6 Ω cm2. Further annealing at higher temperaturesincreases the contact resistivity to the value of ≈5.8 × 10−5 cm2 for annealing at 800 °C. The electrical measurements results were accompanied with the results of structural characterization for determination of Ohmic contact formation mechanism.

show abstract

Vertical GaN Schottky barrier diodes with ohmic contact on N-polar by the atomic layer deposition of aluminum oxide interfacial layer

Yang,

Ma,

Jiang

et al. 2025

Applied Surface Science

View full text Add to dashboard Cite

Vertical GaN Schottky Barrier Diode With Record Low Contact Resistivity on N-Polarity Using Ultrathin ITO Interfacial Layer

Cited by 8 publications

References 38 publications

Vertical Van Der Waals Epitaxy of p‐Mo_xRe_1‐_Xs₂ on GaN for Ultrahigh Detectivity Uv–vis–NIR Photodetector

Vertical Van Der Waals Epitaxy of p‐Mo_xRe_1‐_Xs₂ on GaN for Ultrahigh Detectivity Uv–vis–NIR Photodetector

Low‐Resistivity Ti/Al/TiN/Au Ohmic Contacts to Ga‐ and N‐Face n‐GaN for Vertical Power Devices

Vertical GaN Schottky barrier diodes with ohmic contact on N-polar by the atomic layer deposition of aluminum oxide interfacial layer

Contact Info

Product

Resources

About

Vertical GaN Schottky Barrier Diode With Record Low Contact Resistivity on N-Polarity Using Ultrathin ITO Interfacial Layer

Cited by 8 publications

References 38 publications

Vertical Van Der Waals Epitaxy of p‐MoxRe1‐Xs2 on GaN for Ultrahigh Detectivity Uv–vis–NIR Photodetector

Vertical Van Der Waals Epitaxy of p‐MoxRe1‐Xs2 on GaN for Ultrahigh Detectivity Uv–vis–NIR Photodetector

Low‐Resistivity Ti/Al/TiN/Au Ohmic Contacts to Ga‐ and N‐Face n‐GaN for Vertical Power Devices

Vertical GaN Schottky barrier diodes with ohmic contact on N-polar by the atomic layer deposition of aluminum oxide interfacial layer

Contact Info

Product

Resources

About

Vertical Van Der Waals Epitaxy of p‐Mo_xRe_1‐_Xs₂ on GaN for Ultrahigh Detectivity Uv–vis–NIR Photodetector

Vertical Van Der Waals Epitaxy of p‐Mo_xRe_1‐_Xs₂ on GaN for Ultrahigh Detectivity Uv–vis–NIR Photodetector