Vertical Ge heterojunction gate-ail-around Tunneling Field Effect Transistors with Ge&lt;inf&gt;0.92&lt;/inf&gt;Sn&lt;inf&gt;0.08&lt;/inf&gt;-&amp;#x03B4;-Layers at the tunneling junction

Schulze, Jörg; Blech, Andreas; Fischer, I. A.; Hähnel, D.; Naasz, Sandra; Tropper, Eva-Maria

doi:10.1109/istdm.2014.6874652

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) 2014

DOI: 10.1109/istdm.2014.6874652

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Vertical Ge heterojunction gate-ail-around Tunneling Field Effect Transistors with Ge<inf>0.92</inf>Sn<inf>0.08</inf>-δ-Layers at the tunneling junction

Jörg Schulze

Andreas Blech

I. A. Fischer

et al.

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Vertical Ge heterojunction gate-ail-around Tunneling Field Effect Transistors with Ge<inf>0.92</inf>Sn<inf>0.08</inf>-δ-Layers at the tunneling junction

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