Vertical GeSn/SiGeSn GAA Nanowire n-FETs with High Electron Mobility

Junk, Yannik; Frauenrath, Marvin; Han, Yi; Sun, Jingxuan; Diaz, Omar Concepcion; Bae, Jin Hee; Hartmann, Jean‐Michel; Grützmacher, Detlev; Buca, D.; Zhao, Qiang

doi:10.1109/vlsi-tsa/vlsi-dat57221.2023.10134252

Cited by 2 publications

(1 citation statement)

References 8 publications

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“…Currently, the application of out-of-plane GeSn NWs is still in the phase of basic research and technology development. However, the literature indicates that out-of-plane GeSn NWs have many potential applications, especially as infrared photodetectors [55,62,91,159,162,[166][167][168], high-efficiency Li-ion battery anodes [122], nanowire SWIR lasers [152,169,170], nanowire transistors (figure 8) [55,60,61,[171][172][173][174][175].…”

Section: Potential Applications Of Out-of-plane Gesn Nwsmentioning

confidence: 99%

Research progress of out-of-plane GeSn nanowires

Shen,

Chen,

Sun

2024

Nanotechnology

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As silicon integrated circuits become more and more integrated, traditional electrical interconnections have been their technological limitations, and GeSn materials have attracted a lot of interest due to their potential transition to direct bandgap as well as their compatibility with Si-based technology in recent years. GeSn materials, including GeSn films, GeSn alloys, and GeSn nanowires, are adjustable, scalable, and compatible with silicon. GeSn nanowires, as one-dimensional nanomaterials, including out-of-plane GeSn nanowires and in-plane GeSn nanowires, have different properties from those of bulk materials due to their distinctive structures. However, the former is rarely reported. In this article, we present the preparation of out-of-plane GeSn nanowires using top-down (etching and lithography) and bottom-up (VLS growth mechanism in the vapor-phase method and SFLS, SLS, and SVG growth mechanisms in the liquid-phase method) methods. We also provide a brief description of the applications of out-of-plane GeSn nanowires with various Sn contents and morphologies.

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Section: Potential Applications Of Out-of-plane Gesn Nwsmentioning

confidence: 99%

Research progress of out-of-plane GeSn nanowires

Shen,

Chen,

Sun

2024

Nanotechnology

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Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductors

Seidel,

Liu,

Concepción

et al. 2024

Nat Commun

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Over the last 30 years, group-IV semiconductors have been intensely investigated in the quest for a fundamental direct bandgap semiconductor that could yield the last missing piece of the Si Photonics toolbox: a continuous-wave Si-based laser. Along this path, it has been demonstrated that the electronic band structure of the GeSn/SiGeSn heterostructures can be tuned into a direct bandgap quantum structure providing optical gain for lasing. In this paper, we present a versatile electrically pumped, continuous-wave laser emitting at a near-infrared wavelength of 2.32 µm with a low threshold current of 4 mA. It is based on a 6-periods SiGeSn/GeSn multiple quantum-well heterostructure. Operation of the micro-disk laser at liquid nitrogen temperature is possible by changing to pulsed operation and reducing the heat load. The demonstration of a continuous-wave, electrically pumped, all-group-IV laser is a major breakthrough towards a complete group-IV photonics technology platform.

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Vertical GeSn/SiGeSn GAA Nanowire n-FETs with High Electron Mobility

Cited by 2 publications

References 8 publications

Research progress of out-of-plane GeSn nanowires

Research progress of out-of-plane GeSn nanowires

Continuous-wave electrically pumped multi-quantum-well laser based on group-IV semiconductors

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