Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices

Umana‐Membreno, Gilberto A.; Klein, Brianna; Kala, H; Antoszewski, J.; Gautam, Nutan; Kutty, M. N.; Plis, E.; Krishna, S.; Faraone, Lorenzo

doi:10.1063/1.4772954

Cited by 34 publications

(13 citation statements)

References 20 publications

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“…The SL conduction band structure near the zone centre is approximately isotropic in contrary to the high− ly anisotropic valence band structure. From this reasons we would expect very low hole mobility along the growth direc− tion what is unfavourable in detector design for LWIR FPAs [25]. The estimation of effective masses for MWIR SL ma− terial (6 ML InAs/34 ML GaSb) gives [5] In the 2TSL, the electrons are mainly located in the InAs layers, whereas holes are confined to the GaInSb layers.…”

Section: Simentioning

confidence: 99%

Barrier infrared detectors

Martyniuk

Kopytko

Rogalski

2014

Opto-Electronics Review

109

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In 1959, Lawson and co-workers publication triggered development of variable band gap Hg1−xCdxTe (HgCdTe) alloys providing an unprecedented degree of freedom in infrared detector design. Over the five decades, this material system has successfully fought off major challenges from different material systems, but despite that it has more competitors today than ever before. It is interesting however, that none of these competitors can compete in terms of fundamental properties. They may promise to be more manufacturable, but never to provide higher performance or, with the exception of thermal detectors, to operate at higher temperatures.In the last two decades a several new concepts of photodetectors to improve their performance have been proposed including trapping detectors, barrier detectors, unipolar barrier photodiodes, and multistage detectors. This paper describes the present status of infrared barrier detectors. It is especially addressed to the group of III-V compounds including type-II superlattice materials, although HgCdTe barrier detectors are also included. It seems to be clear that certain of these solutions have merged as a real competitions of HgCdTe photodetectors.

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Section: Simentioning

confidence: 99%

Barrier infrared detectors

Martyniuk

Kopytko

Rogalski

2014

Opto-Electronics Review

109

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“…Hall [41], capacitance-voltage, and current-voltage measurements [42] of T2SL structures grown on semi-insulating GaAs substrate directly or with the interfacial misfit (IMF) dislocation arrays technique [43] were also reported. Variable magnetic field geometric magnetoresistance measurements and a mobility spectrum analysis, (MSA) technique for data analysis, have been employed by Umana-Membreno et al [44] to study vertical minority carrier electron transport parameters in T2SL structures. Works of Christol et al [45,46], Haugan et al [47], and Szmulowicz et al [48,49]are concerned with the influence of T2SL composition and growth conditions on background carrier concentration and mobility.…”

Section: Characterization Of T2sl Materialsmentioning

confidence: 99%

InAs/GaSb Type-II Superlattice Detectors

Plis

2014

Advances in Electronics

106

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InAs/(In,Ga)Sb type-II strained layer superlattices (T2SLs) have made significant progress since they were first proposed as an infrared (IR) sensing material more than three decades ago. Numerous theoretically predicted advantages that T2SL offers over present-day detection technologies, heterojunction engineering capabilities, and technological preferences make T2SL technology promising candidate for the realization of high performance IR imagers. Despite concentrated efforts of many research groups, the T2SLs have not revealed full potential yet. This paper attempts to provide a comprehensive review of the current status of T2SL detectors and discusses origins of T2SL device performance degradation, in particular, surface and bulk dark-current components. Various approaches of dark current reduction with their pros and cons are presented.

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“…Further developments by several research groups led to what is known as mobility spectrum analysis (MSA), in which the generated spectra are optimized to quantitatively agree with the experimentally derived magnetic field-dependent Hall and resistivity results [2][3][4][5][6][7]. Recently, MSA has been utilized to study carrier transport in a variety of semiconductor nanostructures and devices [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26][27].…”

Section: Introductionmentioning

confidence: 99%

Intrinsic broadening of the mobility spectrum of bulk n-type GaAs

et al. 2014

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Modern devices consisting of multiple semiconductor layers often result in the population of numerous distinct carrier species. Conventional Hall measurements at a single-magnetic-field strength provide only a weighted average of the electron mobility and carrier concentration of a semiconductor structure and, therefore, are of limited use for the extraction of carrier transport information. In recent years, mobility spectrum analysis techniques, which have been developed to extract a mobility spectrum from magnetic field-dependent conductivitytensor measurements, have been applied in the analysis of carrier conductivity mechanisms of numerous semiconductor structures and devices. Currently there is a severe lack of reported studies on theoretical calculations of the mobility distribution of semiconductor structures or devices. In addition, the majority of reports on experimental mobility spectrum analysis are of complex, multi layered structures such as type-II superlattices, and the interpretation of the mobility spectra has been difficult. Therefore, a good understanding of the mobility spectrum has yet to be developed. For example, it is often assumed that distinct peaks of a mobility spectrum result from fundamentally different conduction mechanisms such as the bulk and surface conduction of narrow-bandgap semiconductors. In this article, we present calculations of the electron mobility distribution of bulk GaAs, which predict the existence of multiple Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. mobility spectrum peaks that result from electron conductivity in the Γ conduction band. This report serves as an important and simple test case upon which experimentally measured mobility spectra can be compared. It also presents insight into the general nature of electron mobility distributions.

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Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices

Cited by 34 publications

References 20 publications

Barrier infrared detectors

Barrier infrared detectors

InAs/GaSb Type-II Superlattice Detectors

Intrinsic broadening of the mobility spectrum of bulk n-type GaAs

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