2007
DOI: 10.1109/smicnd.2007.4519742
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Vertical MOSFETs for High Performance, Low Cost CMOS

Abstract: Abstract-We present a review of recent reports on vertical MOSFETs which includes a summary of our own research in this area. Such devices can offer a decananometer channel length in a relaxed lithography. Furthermore, the footprint is substantially smaller than an equivalent lateral MOSFET for a given on-current. We summarise a number of innovative device architectures that allow control ofshort channel effects and reduction of parasitic elements. Both numerical modelling and experimental results are presente… Show more

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