Vertical nonpolar growth templates for light emitting diodes formed with GaN nanosheets

Yeh, Ting Kuang; Lin, Yung‐Chih; Ahn, Byungmin; Stewart, Lawrence S.; Dapkus, P.D.; Nutt, Steven

doi:10.1063/1.3671182

Cited by 53 publications

(63 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The examinations of the transmission electron microscopy and scanning electron microscopy showed that the fabricated AlN nanosheets were uniform and smooth. Consequently, very great efforts have been devoted to the synthesis of 1D and 2D GaN nanostructures, such as nanowires, nanosheets, and nanoribbons for nanodevice applications [20].…”

Section: Introductionmentioning

confidence: 99%

Electronic and optical properties of advance semiconductor materials: BN, AlN and GaN nanosheets from first principles

Beiranvand

Valedbagi

2016

Optik

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Electronic and optical properties of advance semiconductor materials: BN, AlN and GaN nanosheets from first principles

Beiranvand

Valedbagi

2016

Optik

View full text Add to dashboard Cite

“…However, there are also other 3D architectures like fin geometries. These fins are also called stripes [1], sheets [2] or walls [3] and can be produced by top-down [4], [5] or bottom-up [6] approaches by molecular beam epitaxy (MBE) or metal organic vapor phase epitaxy (MOVPE). Especially for bottomup fabricated fins, there are many advantages.…”

Section: Introductionmentioning

confidence: 99%

Study of 3D-growth conditions for selective area MOVPE of high aspect ratio GaN fins with non-polar vertical sidewalls

Hartmann

Steib

Zhou

et al. 2017

Journal of Crystal Growth

View full text Add to dashboard Cite

GaN fins are 3D architectures elongated in one direction parallel to the substrate surface. They have the geometry of walls with a large height to width ratio as well as small footprints. When appropriate symmetry directions of the GaN buffer are used, the sidewalls are formed by non-polar {11-20} planes, making the fins particularly suitable for many device applications like LEDs, FETs, lasers, sensors or waveguides. The influence of growth parameters like temperature, pressure, V/III ratio and total precursor flow on the fin structures is analyzed. Based on these results, a 2-temperature-step-growth was developed, leading to fins with smooth side and top facets, fast vertical growth rates and good homogeneity along their length as well as over different mask patterns. For the core-shell growth of fin LED heterostructures, the 2temperature-step-growth shows much smoother sidewalls and less crystal defects in the InGaN QW and p-GaN shell compared to structures with cores grown in just one step. Electroluminescence spectra of the 2temperature-step-grown fin LED are demonstrated.

show abstract

“…[320,321] By employing recent advances in low-dimensional materials synthesis, [322] multiple analytes and physical state variables can be detected in an orthogonal fashion. Complementing electric-current-based transduction, charged particles generated by field emission and field ionization on ultra-sharp semiconductor tips or filaments can be superior transducers for fast, efficient and reliable sensing of gas, pressure, shock and vibration in extreme conditions.…”

Section: Extreme-environment Sensors/electronicsmentioning

confidence: 99%

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Tsao

Chowdhury

Hollis

et al. 2017

Adv Elect Materials

1,061

463

View full text Add to dashboard Cite

Vertical nonpolar growth templates for light emitting diodes formed with GaN nanosheets

Cited by 53 publications

References 11 publications

Electronic and optical properties of advance semiconductor materials: BN, AlN and GaN nanosheets from first principles

Electronic and optical properties of advance semiconductor materials: BN, AlN and GaN nanosheets from first principles

Study of 3D-growth conditions for selective area MOVPE of high aspect ratio GaN fins with non-polar vertical sidewalls

Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

Contact Info

Product

Resources

About