Vertical Power p-n Diodes Based on Bulk GaN

Kizilyalli, I.C.; Edwards, Andrew; Aktaş, Özgür; Prunty, T.; Bour, D. P.

doi:10.1109/ted.2014.2360861

Cited by 316 publications

(212 citation statements)

References 31 publications

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“…3(a), similar but more-pronounced and dense macro-steps are observed for the MOCVD-grown GaN layer on a GaN substrate, as reported by other groups. 5) In the AFM image [ Fig. 3(b)], a marked reduction in TDDs on changing the substrate from sapphire to single-crystal GaN is obvious, as only one dislocation, at the position marked by an arrow, was observed.…”

Section: Resultsmentioning

confidence: 99%

“…[3][4][5] However, the present status of the development of GaN-based power devices lags behind that of SiC devices. Availabilities of single-crystal SiC substrates since the 1980s and of high-purity epitaxial layers of SiC since the 1990s have led to more-rapid development of SiC-power devices.…”

Section: Introductionmentioning

confidence: 99%

“…4,5,[27][28][29] Among the various methods for the growth of freestanding GaN substrates, hydride-vaporphase epitaxy (HVPE) is the most well established, and wafers with diameters of 2-in. or more have been prepared and used in the mass production of optoelectronic devices.…”

Section: Introductionmentioning

confidence: 99%

“…Although the above mentioned studies have shown the potential benefits of GaN-based vertical-type power devices, it remains difficult to produce high-purity layers of GaN by MOCVD due to the presence of residual carbon impurities in the range 10 15 to 10 17 cm −3 . 5,[13][14][15] The enhanced incorporation of carbon under the high-growth-rate conditions needed to produce thick drift layers 15) is another potential obstacle to the application of the MOCVD method in future mass production of power devices.…”

Section: Introductionmentioning

confidence: 99%

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Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Fujikura

Konno

Yoshida

et al. 2017

Jpn. J. Appl. Phys.

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Thick (20–30 µm) layers of highly pure GaN with device-quality smooth as-grown surfaces were prepared on freestanding GaN substrates by using our advanced hydride-vapor-phase epitaxy (HVPE) system. Removal of quartz parts from the HVPE system markedly reduced concentrations of residual impurities to below the limits of detection by secondary-ion mass spectrometry. Appropriate gas-flow management in the HVPE system realized device-quality, smooth, as-grown surfaces with an excellent uniformity of thickness. The undoped GaN layer showed insulating properties. By Si doping, the electron concentration could be controlled over a wide range, down to 2 × 1014 cm−3, with a maximum mobility of 1150 cm2·V−1·s−1. The concentration of residual deep levels in lightly Si-doped layers was in the 1014 cm−3 range or less throughout the entire 2-in. wafer surface. These achievements clearly demonstrate the potential of HVPE as a tool for epitaxial growth of power-device structures.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Fujikura

Konno

Yoshida

et al. 2017

Jpn. J. Appl. Phys.

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“…[http://dx.doi.org/10.1063/1.4975056] GaN has excellent material characteristics for use in power devices, including a high breakdown voltage, high saturation velocity, and high thermal stability. Recent advances in bulk GaN growth technology have facilitated the development of vertical power devices such as Schottky barrier diodes, 1,2 p-n junction diodes, 3,4 and trench metaloxide-semiconductor field-effect transistors. 5 One of the key methods used to fabricate these devices is a light n-type doping of GaN with a low residual impurity concentration of the order of 10 15 cm À3 or less.…”

mentioning

confidence: 99%

Electrical properties of Si-doped GaN prepared using pulsed sputtering

Arakawa

Ueno

Imabeppu

et al. 2017

Applied Physics Letters

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In this study, we investigated the basic electrical properties of Si-doped wurtzite GaN films prepared using a low-temperature pulsed sputtering deposition (PSD) process. We found that the electron concentration can be controlled in the range between 1.5 × 1016 and 2.0 × 1020 cm−3. For lightly Si-doped GaN ([Si] = 2.1 × 1016 cm−3), the room temperature (RT) electron mobility was as high as 1008 cm2 V−1 s−1, which was dominantly limited by polar optical phonon scattering. Moreover, we found that heavily Si-doped GaN prepared using PSD exhibited an RT mobility as high as 110 cm2 V−1 s−1 at an electron concentration of 2 × 1020 cm−3, which indicated that the resistivity of this film was almost as small as those of typical transparent conductive oxides such as indium tin oxide. At lower temperatures, the electron mobility increased to 1920 cm2 V−1 s−1 at 136 K, and the temperature dependence was well explained by conventional scattering models. These results indicate that Si-doped GaN prepared using PSD is promising not only for the fabrication of GaN-based power devices but also for use as epitaxial transparent electrode materials for nitride based optical devices.

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Future Aspects of MOCVD Technology for Epitaxial Growth of Semiconductors

Detchprohm

Ryou

et al. 2019

Metalorganic Vapor Phase Epitaxy (MOVPE)

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Vertical Power p-n Diodes Based on Bulk GaN

Cited by 316 publications

References 31 publications

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Hydride-vapor-phase epitaxial growth of highly pure GaN layers with smooth as-grown surfaces on freestanding GaN substrates

Electrical properties of Si-doped GaN prepared using pulsed sputtering

Future Aspects of MOCVD Technology for Epitaxial Growth of Semiconductors

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