Vertical Schottky barrier diodes of &amp;#x03B1;-Ga&lt;inf&gt;2&lt;/inf&gt;O&lt;inf&gt;3&lt;/inf&gt; fabricated by mist epitaxy

Oda, Masahiko; Kikawa, Junjiroh; Takatsuka, Akio; Tokuda, Rie; Sasaki, Takahiro; Kaneko, Kentaro; Fujita, Shizυo; Hitora, Toshimi

doi:10.1109/drc.2015.7175593

Cited by 9 publications

(10 citation statements)

References 2 publications

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“…12. 61,78) The forward current density versus voltage (J-V ) characteristics of α-Ga 2 O 3 SBDs are summarized in Fig. 13 for (a) a lateral SBD, 77) (b) a vertical SBD (an initial device), 78) and (c) vertical SBDs (advanced devices).…”

Section: Evolution Of Sbdsmentioning

confidence: 99%

“…61,78) The forward current density versus voltage (J-V ) characteristics of α-Ga 2 O 3 SBDs are summarized in Fig. 13 for (a) a lateral SBD, 77) (b) a vertical SBD (an initial device), 78) and (c) vertical SBDs (advanced devices). 61) A marked increase of current density together with a reduction in on resistance was seen from (a) to (c).…”

Section: Evolution Of Sbdsmentioning

confidence: 99%

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Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices

Fujita

Oda²,

Kaneko

et al. 2016

Jpn. J. Appl. Phys.

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127

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The recent progress and development of corundum-structured III-oxide semiconductors are reviewed. They allow bandgap engineering from 3.7 to ∼9 eV and function engineering, leading to highly durable electronic devices and deep ultraviolet optical devices as well as multifunctional devices. Mist chemical vapor deposition can be a simple and safe growth technology and is advantageous for reducing energy and cost for the growth. This is favorable for the wide commercial use of devices at low cost. The III-oxide semiconductors are promising candidates for new devices contributing to sustainable social, economic, and technological development for the future.

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Section: Evolution Of Sbdsmentioning

confidence: 99%

Section: Evolution Of Sbdsmentioning

confidence: 99%

Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices

Fujita

Oda²,

Kaneko

et al. 2016

Jpn. J. Appl. Phys.

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127

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“…In the previous experiments we have applied a leral-structured SBD because sapphire is a high-resistivity substrate. 20,21) However the lateral structure on the sapphire substrate is fatal to the low series resistance of the SBD and to effective heat radiation from the SBD to the heat sink. We found that an α-Ga 2 O 3 layer on sapphire was able to be lifted off from the sapphire substrate.…”

mentioning

confidence: 99%

Schottky barrier diodes of corundum-structured gallium oxide showing on-resistance of 0.1 mΩ·cm² grown by MIST EPITAXY^®

Oda¹,

Tokuda²,

Kambara³

et al. 2016

Appl. Phys. Express

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203

123

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Thin-film corundum-structured gallium oxide (α-Ga2O3) Schottky barrier diodes (SBDs) were fabricated by growing α-Ga2O3 layers on sapphire substrates by the safe, low-cost, and energy-saving MIST EPITAXY® technique, followed by lifting off the α-Ga2O3 layers from the substrates. The SBDs exhibited on-resistance and breakdown voltage of 0.1 mΩ·cm2 and 531 V (SBD1) or 0.4 mΩ·cm2 and 855 V (SBD2), respectively. These results will encourage the future evolution of low-cost and high-performance SBDs with α-Ga2O3.

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“…Forward (inside figure) and reverse J-V characteristics of a -Ga2O3 SBD 34). Forward current density (J) versus voltage (V) characteristics of vertical SBD structure with -Ga2O3 (a) and reverse one (b) 35). Forward current density versus applied voltage characteristics of -Ga2O3 SBDs 36).…”

mentioning

confidence: 99%

Crystal Growth and Device Applications of Corundum-Structured Gallium Oxide

Kaneko¹,

Oda²,

Takatsuka³

et al. 2016

J. Soc. Mat. Sci., Japan

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This paper reviews the evolution of corundum-structured gallium oxide (-Ga2O3) semiconductors from crystal growth of single-crystalline films to potential device applications. In spite of thermodynamically metastable phase, highquality -Ga2O3 can be grown on sapphire substrates by the use of mist chemical vapor deposition (CVD), or mist epitaxy, allowing low-cost and high performance power devices. N-type conductivity control is achieved by Sn doping with the carrier concentration from 10 17 to 10 19 cm -3 . Marked progress in performance of Schottky barrier diodes (SBDs) has been brought by the development of device structures. The most up-to-date results show on resistance and breakdown voltage of 0.1 mcm 2 and 531 V (SBD1) or 0.4 mcm 2 and 855 V (SBD2), respectively, and the record-low on resistance was demonstrated at the high breakdown voltage. These results encourage the future development of low cost and high performance power devices with -Ga2O3.

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Vertical Schottky barrier diodes of α-Ga<inf>2</inf>O<inf>3</inf> fabricated by mist epitaxy

Cited by 9 publications

References 2 publications

Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices

Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices

Schottky barrier diodes of corundum-structured gallium oxide showing on-resistance of 0.1 mΩ·cm² grown by MIST EPITAXY^®

Crystal Growth and Device Applications of Corundum-Structured Gallium Oxide

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Vertical Schottky barrier diodes of &#x03B1;-Ga<inf>2</inf>O<inf>3</inf> fabricated by mist epitaxy

Cited by 9 publications

References 2 publications

Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices

Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices

Schottky barrier diodes of corundum-structured gallium oxide showing on-resistance of 0.1 mΩ·cm2 grown by MIST EPITAXY®

Crystal Growth and Device Applications of Corundum-Structured Gallium Oxide

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Product

Resources

About

Vertical Schottky barrier diodes of α-Ga<inf>2</inf>O<inf>3</inf> fabricated by mist epitaxy

Schottky barrier diodes of corundum-structured gallium oxide showing on-resistance of 0.1 mΩ·cm² grown by MIST EPITAXY^®