Vertical spin transport in MnAs/GaMnAs heterostructures

Chun, Seung‐Hyun; Yu, Jun; Kim, Yong Se; Choi, Hoil; Bak, Jung Hoon; Park, Y.D.; Khim, Z. G.

doi:10.1016/j.jmmm.2006.02.048

Cited by 2 publications

(1 citation statement)

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“…However, under optimal conditions, there is finite selectivity between GaAs and In 1− x Ga x As, whereas for GaAs/Al 1− x Ga x As and GaAs/In 1− x Ga x P, nearly infinite selectivity exists. In particular, GaMnAs/AlAs heterostructures have been studied in some depth to realize GaMnAs-based tunneling anisotropic magnetoresistance (TAMR) devices [ 19 , 20 ]. GaMnAs/InGaP can be tuned to have nearly zero lattice mismatch, which is ideal for realizing nanomechanical structures [ 21 ], but this requires the regrowth of high-quality GaMnAs on a prepared InGaP surface, which has been found to be difficult.…”

Section: Introductionmentioning

confidence: 99%

Free-Standing GaMnAs Nanomachined Sheets for van der Pauw Magnetotransport Measurements

et al. 2016

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We report on the realization of free-standing GaMnAs epilayer sheets using nanomachining techniques. By optimizing the growth conditions of the sacrificial Al0.75Ga0.25As layer, free-standing metallic GaMnAs (with ~6% Mn) microsheets (with TC ~85 K) with integrated electrical probes are realized for magnetotransport measurements in the van der Pauw geometry. GaMnAs epilayer needs to be physically isolated to avoid buckling effects stemming from the release of lattice mismatch strain during the removal of the AlGaAs sacrificial layer. From finite element analysis, symmetrically placed and serpentine-shaped electrical leads induce minimal thermal stress at low temperatures. From magnetotransport measurements, changes in magnetic anisotropy are readily observed.

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Section: Introductionmentioning

confidence: 99%