Vertical stacking of InAs quantum dots for polarization-insensitive semiconductor optical amplifiers

Inoue, T.; Asada, M.; Yasuoka, N.; Wada, Osamu

doi:10.1088/1742-6596/245/1/012076

Cited by 5 publications

(3 citation statements)

References 8 publications

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“…There are two main ways of achieving SOA polarization insensitivity-that is, increasing the thickness of the active layer and changing the low-dimensional quantum structure. From Equation (10), it is evident that increasing the thickness of the active layer can increase the confinement factor of the TM mode, thereby reducing the polarization-dependent gain [30,76]. However, the thickening of the active layer also affects the reliability and saturation output power of the SOA, so it is not practical to increase the active layer thickness blindly.…”

Section: Polarization Insensitivitymentioning

confidence: 99%

A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band

Tang,

Yang,

Qin

et al. 2023

Sensors

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The 1550 nm band semiconductor optical amplifier (SOA) has great potential for applications such as optical communication. Its wide-gain bandwidth is helpful in expanding the bandwidth resources of optical communication, thereby increasing total capacity transmitted over the fiber. Its relatively low cost and ease of integration also make it a high-performance amplifier of choice for LiDAR applications. In recent years, with the rapid development of quantum-well (QW) material systems, SOAs have gradually overcome the shortcomings of polarization sensitivity and high noise. The research on quantum-dot (QD) materials has further improved the noise characteristics and transmission loss of SOAs. The design of special waveguide structures—such as plate-coupled optical waveguide amplifiers and tapered amplifiers—has also increased the saturation output power of SOAs. The maximum gain of the SOA has been reported to be more than 21 dB. The maximum saturation output power has been reported to be more than 34.7 dBm. The maximum 3 dB gain bandwidth has been reported to be more than 120 nm, the lowest noise figure has been reported to be less than 4 dB, and the lowest polarization-dependent gain has been reported to be 0.1 dB. This study focuses on the improvement and enhancement of the main performance parameters of high-power SOAs in the 1550 nm band and introduces the performance parameters, the research progress of high-power SOAs in the 1550 nm band, and the development and application status of SOAs. Finally, the development trends and prospects of high-power SOAs in the 1550 nm band are summarized.

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Section: Polarization Insensitivitymentioning

confidence: 99%

A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band

Tang,

Yang,

Qin

et al. 2023

Sensors

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“…Recent experiments by T. Inoue et al 12,19,36 showed, without any theoretical guidance, that similar tuning of polarization properties is possible in regular InAs QD stacks where the QD layers are geometrically separated arXiv:1106.0517v1 [cond-mat.mtrl-sci] 2 Jun 2011 FIG. 1: (a)TEM images of three, six, and nine QD layer stacks grown by solid-source molecular-beam epitaxy 12 .…”

mentioning

confidence: 99%

“…Finally the QD layers are capped with a 100nm thick GaAs layer. Further details of our growth process can be found in earlier publications 12,19,23,36 . The crystallographic properties of the stacked QDs are examined using a cross-sectional transmission electron microscope (TEM).…”

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confidence: 99%

Experimental and atomistic theoretical study of degree of polarization from multilayer InAs/GaAs quantum dot stacks

Usman¹,

et al. 2011

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Recent experimental measurements, without any theoretical guidance, showed that isotropic polarization response can be achieved by increasing the number of QD layers in a QD stack. Here we analyse the polarization response of multi-layer quantum dot stacks containing up to nine quantum dot layers by linearly polarized PL measurements and by carrying out a systematic set of multi-million atom simulations. The atomistic modeling and simulations allow us to include correct symmetry properties in the calculations of the optical spectra: a factor critical to explain the experimental evidence. The values of the degree of polarization (DOP) calculated from our model follows the trends of the experimental data. We also present detailed physical insight by examining strain profiles, band edges diagrams and wave function plots. Multi-directional PL measurements and calculations of the DOP reveal a unique property of InAs quantum dot stacks that the TE response is anisotropic in the plane of the stacks. Therefore a single value of the DOP is not sufficient to fully characterize the polarization response. We explain this anisotropy of the TE-modes by orientation of hole wave functions along the [110] direction. Our results provide a new insight that isotropic polarization response measured in the experimental PL spectra is due to two factors: (i) TM001-mode contributions increase due to enhanced intermixing of HH and LH bands, and (ii) TE110-mode contributions reduce significantly due to hole wave function alignment along the [110] direction. We also present optical spectra for various geometry configurations of quantum dot stacks to provide a guide to experimentalists for the design of multi-layer QD stacks for optical devices. Our results predict that the QD stacks with identical layers will exhibit lower values of the DOP than the stacks with non-identical layers.

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Size-dependent Electronic and Polarization Properties of Multi-Layer InAs Quantum Dot Molecules

Usman¹

2013

Lecture Notes in Nanoscale Science and Technology

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Vertical stacking of InAs quantum dots for polarization-insensitive semiconductor optical amplifiers

Cited by 5 publications

References 8 publications

A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band

A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band

Experimental and atomistic theoretical study of degree of polarization from multilayer InAs/GaAs quantum dot stacks

Size-dependent Electronic and Polarization Properties of Multi-Layer InAs Quantum Dot Molecules

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