2011
DOI: 10.1117/12.883755
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Vertical transport in InAs/GaSb type-II strained layer superlattices for infrared focal plane array applications

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Cited by 10 publications
(2 citation statements)
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“…They require cryogenic cooling systems to achieve high signal-to-noise ratio at high temperatures. In addition, MCT is plagued with high material toxicity [5,6], poor uniformity [6,7], fabrication complexity, high cost and low producibility yield while QWIPs suffers from low quantum efficiency, lower operating temperature [8] and one-dimensional (1 D) carrier confinement which increases dark current making them unsuitable for high-temperature operation [9-11].…”
Section: Introductionmentioning
confidence: 99%
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“…They require cryogenic cooling systems to achieve high signal-to-noise ratio at high temperatures. In addition, MCT is plagued with high material toxicity [5,6], poor uniformity [6,7], fabrication complexity, high cost and low producibility yield while QWIPs suffers from low quantum efficiency, lower operating temperature [8] and one-dimensional (1 D) carrier confinement which increases dark current making them unsuitable for high-temperature operation [9-11].…”
Section: Introductionmentioning
confidence: 99%
“…Consequently, Ga-based InAs/GaSb T2SL infrared material have attracted extensive research interest for photodetection due to their potential to provide cheaper, high device performance at high temperature with significantly reduced dark current [15] and high responsivity [11] resulting from large absorption coefficient [16], reduced tunnelling currents [17] and reduced hole-hole auger recombination due to the large splitting between the heavy-hole and the light-hole bands of the superlattice [18]. InAs/GaSb T2SL have been theoretically predicted [7,19] to significantly outperform current state-of-the-art MCT.…”
Section: Introductionmentioning
confidence: 99%