Vertical Tunnel-FET Analysis for Excessive Low Power Digital Applications

Singh, Shailendra; Raj, Balwinder

doi:10.1109/icsccc.2018.8703312

Cited by 21 publications

(9 citation statements)

References 20 publications

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“…inverse slope of the transfer curve while ID changes from 10 −15 μA/μm to 10 −11 μA/μm, is shown from 35 to 45 mV/decade for the L-shaped TFET which means that the L-shaped TFET suggests possible applications for the low power operation [34,35]. In transfer curves, we measure three regions: ION, IHUMP and IAMB variations.…”

Section: Resultsmentioning

confidence: 98%

“…The result shows that the L-shaped TFET can improve the weak drivability of I ON , which is a weakness of TFET. In addition, the average S ( S avg ), defined as the average inverse slope of the transfer curve while I D changes from 10 −15 μA/μm to 10 −11 μA/μm, is shown from 35 to 45 mV/decade for the L-shaped TFET which means that the L-shaped TFET suggests possible applications for the low power operation [ 34 , 35 ]. In transfer curves, we measure three regions: I ON , I HUMP and I AMB variations.…”

Section: Resultsmentioning

confidence: 99%

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Analysis of Current Variation with Work Function Variation in L-Shaped Tunnel-Field Effect Transistor

Kim

Song

et al. 2020

Micromachines

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In this paper, an investigation is performed to analyze the L-shaped tunnel field-effect transistor (TFET) depending on a gate work function variation (WFV) with help of technology computer-aided design (TCAD) simulation. Depending on the gate voltage, the three variations occur in transfer curves. The first one is the on-state current (ION) variation, the second one is the hump current (IHUMP) variation, and the last one is ambipolar current (IAMB) variation. According to the simulation results, the ION variation is sensitive depending on the size of the tunneling region and could be reduced by increasing the tunneling region. However, the IHUMP and IAMB variations are relatively irrelevant to the size of the tunneling region. In order to analyze the cause of this difference, we investigated the band-to-band tunneling (BTBT) rate according to WFV cases. The results show that when ION is formed in L-shaped TFET, the BTBT rate relies on the WFV in the whole region of the gate because the tunnel barrier is formed in the entire area where the source and the gate meet. On the other hand, when the IHUMP and IAMB are formed in L-shaped TFET, the BTBT rate relies on the WFV in the edge of the gate.

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Section: Resultsmentioning

confidence: 98%

Section: Resultsmentioning

confidence: 99%

Analysis of Current Variation with Work Function Variation in L-Shaped Tunnel-Field Effect Transistor

Kim

Song

et al. 2020

Micromachines

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“…As a result, the electric field also high before the sourcechannel interface, which causes more tunneling phenomenon when the barrier will suppress. Using equation ( 4) to (7), we can find out the relation between transconductance and Subthreshold Slope [26]. Form equation (7), the transconductance value inversely dependent upon the SS value.…”

Section: Device Structure and Simulation Frameworkmentioning

confidence: 99%

“…Using equation ( 4) to (7), we can find out the relation between transconductance and Subthreshold Slope [26]. Form equation (7), the transconductance value inversely dependent upon the SS value. Since Delta doped N+ GS TMG VTFET holds the lowest SS value, it comes with the highest transconductance value, as can be justified from Fig.…”

Section: Device Structure and Simulation Frameworkmentioning

confidence: 99%

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Design and Investigation of Gate Stacked Vertical TFET with N+ SiGe Pocket Doped Heterojunction for Performance Enhancement

Gupta¹,

Wariya²,

Singh³

2021

Preprint

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In this paper, a novel delta-doped N + Silicon-Germanium Gate Stacked Triple Metal Gate Vertical TFET (Delta doped N + GS TMG VTFET) is proposed and investigated using the Silvaco TCAD simulation tool. Four different combinations were presented and compared with and without the gate stacking method and Si0.2Ge0.8 N + pocket delta-doped layer to render the optimized results. Among all, Delta doped N + GS TMG VTFET structure comes out with a very steep sub-threshold slope (9.75 mV/dec), 40 % lower than the first configuration of TMG VTFET. The inclusion of the N + delta-doped layer between the source and channel and gate will enhance the ON-state drive current performance by reducing the OFF-state leakage current. This happens due to the lower bandgap of the N + delta-doped layer cause narrow BTBT, which results in a high drive current. The Triple metal gate is designed to mitigate the ambipolar conduction by modulating the optimized wok function at 4.15, 4.3, and 4.15 eV. The distribution of the source channel in the vertical structure will enhance the device's scalability due to the electron tunneling moves in the vertical electric field direction. The optimally constructed structure demonstrates improved performance, such as a high ION/IOFF current ratio (~ 1013) and sub-threshold voltage (0.33 V). The results obtained from the proposed device make it suitable for the ultra-low-power device application.

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Band‐to‐Band Tunneling Control by External Forces: A Key Principle and Applications

Woo

Kim

Yoo

2022

Adv Elect Materials

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Band‐to‐band tunneling (BTBT) devices with superior subthreshold swing directly related to on/off switching speed and power consumption efficiency have emerged as a breakthrough of the limitation in conventional metal‐oxide‐semiconductor field‐effect transistors (MOSFETs). However, it is difficult to reach a higher level of electrical characteristics with only a combination of materials based on their intrinsic characteristics. External forces, such as electric fields, light, and temperature, can modulate the electron and hole concentration and control the tunneling probability and the electrical characteristics of heterostructure electronics. Recent articles employing external forces to improve the BTBT performance and demonstrate the mechanism of BTBT devices are summarized with five representative external forces. Moreover, the utility of the external force‐induced performance improvement of the BTBT device is also discussed by providing various applications.

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Vertical Tunnel-FET Analysis for Excessive Low Power Digital Applications

Cited by 21 publications

References 20 publications

Analysis of Current Variation with Work Function Variation in L-Shaped Tunnel-Field Effect Transistor

Analysis of Current Variation with Work Function Variation in L-Shaped Tunnel-Field Effect Transistor

Design and Investigation of Gate Stacked Vertical TFET with N+ SiGe Pocket Doped Heterojunction for Performance Enhancement

Band‐to‐Band Tunneling Control by External Forces: A Key Principle and Applications

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