Vertical tunneling between two quantum dots in a transverse magnetic field

Tewordt, M.; Hughes, R. J. F.; Martín‐Moreno, Luis; Nicholls, J.E.; Asahi, H.; Kelly, Michael J.; Law, V. J.; Ritchie, D. A.; Frost, J. E. F.; Jones, G. A. C.; Pepper, M.

doi:10.1103/physrevb.49.8071

Cited by 24 publications

(9 citation statements)

References 27 publications

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“…If the barriers are asymmetric and electrons are injected from the transparent side, they will accumulate in the QD [73,77,82,220]. Here one can measure the modified Coulomb staircase (shifted in voltage due to the vertical confinement energy mentioned above), which is in fact a manifestation of the addition spectrum.…”

Section: Transport Spectroscopy Of Vertical Qdsmentioning

confidence: 99%

Single-electron phenomena in semiconductors

Meirav

Foxman

1996

Semicond. Sci. Technol.

139

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The study of single-electron phenomena associated with tunnelling in semiconductor nanostructures has emerged in recent years as a major forefront of condensed matter physics, whose implications range from fundamental physics to electronic device applications. This paper presents a tutorial review of the subject, with emphasis on the role of single-electron charging in such semiconductor 'quantum dots'. The main purpose is to describe the various phenomena observed in these experiments and to present the theoretical understanding of these phenomena in an introductory fashion. The paper attempts to explain the underlying physics at the intuitive level and tries to draw, as much as possible, a unifying perspective on a relatively large body of knowledge acquired within a short time by the conjunction of many individual contributions.

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Section: Transport Spectroscopy Of Vertical Qdsmentioning

confidence: 99%

Single-electron phenomena in semiconductors

Meirav

Foxman

1996

Semicond. Sci. Technol.

139

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“…The dots are arranged vertically 2 with separation s. This vertical geometry is of specific experimental interest given the possibility of fabrication via etching of a multiple quantum well structure (see Ref. [14] for P = 2). Following several single-dot studies [1], we model each of the P dots by 2D (xy plane) parabolic potentials with a perpendicular magnetic field B (z direction) of sufficient strength to spin-polarize the electrons.…”

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confidence: 99%

Entangled electronic states in multiple-quantum-dot systems

Benjamin

Johnson

1995

Phys. Rev. B

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We present an analytically solvable model of P colinear, two-dimensional quantum dots, each containing two electrons. Inter-dot coupling via the electron-electron interaction gives rise to sets of entangled ground states.These ground states have crystal-like inter-plane correlations and arise discontinously with increasing magnetic field. Their ranges and stabilities are found to depend on dot size ratios, and to increase with P .

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“…Focused ion beam implantation can also be used to define structures containing quantum dots [8]. Using triple barrier RTDs as starting structure, tunneling processes in coupled quantum dot structures have also been investigated experimentally [9] and theoretically [10][11][12]. The fine structure of the current-voltage characteristic [13] in the above experiments can be explained by strong coupling between 1D subbands in the contact region and 0D states inside the quantum dots.…”

Section: Introductionmentioning

confidence: 98%