Vertical ZnO nanowire growth on metal substrates

Abstract

Vertical growth of ZnO nanowires is usually achieved on lattice-matched substrates such as ZnO or sapphire using various vapor transport techniques. Accomplishing this on silicon substrates requires thick ZnO buffer layers. Here we demonstrate growth of vertical ZnO nanowires on FeCrAl substrates. The pre-annealing prior to growth appears to preferentially segregate Al and O to the surface, thus leading to a self-forming, thin pseudo-buffer layer, which then results in vertical nanowire growth as on sapphire substrates. Metal substrates are more suitable and cheaper than others for applications in piezoelectric devices, and thin self-forming layers can also reduce interfacial resistance to electrical and thermal conduction.

Enhanced photocatalytic degradation of methylene blue by reduced graphene-oxide/titanium dioxide/zinc oxide ternary nanocomposites

“…The TiO 2 peaks are at 151, 394, 510, and 632 cm À 1 , which are assigned to the E g , B 1g , B 1g þA 1g , and E g modes of the anatase phase respectively, consequently confirming the formation of anatase phase [28]. In addition, ZnO peaks are seen at 119, 436 and 1146 cm À 1 , which correspond to 2E 2 low , E 2 high and 2LO respectively [35,36]. The presence of anatase TiO 2 and ZnO is confirmed by means of Raman analysis and the Raman peaks are consistent with the previous report.…”

Controlled growth of vertical ZnO nanowires on copper substrate

“…Indeed, we have grown ZnO NWs on stainless steel previously without the aid of any catalysts. 14 In faster ramp rates during heating, we observed ZnO NW growth occurring in non-vertical orientations, where each group of $micron-sized diameter regions on the Cu substrate had NWs pointing in the same direction within each respective region. We suspect that it was due to different grain orientations of the surface.…”

Role of oxygen vacancies and In‐doping on the sensing performance of ZnO particles

“…The intensity of the E 2 vibration, for the samples submitted to TT, increases due to an improvement of the crystal quality of the particles. The signal intensity located at 380 and 415 cm -1 correspond to the A 1 (TO) and E 1 (TO) polar phonon vibrations, respectively; both peaks could be transverse-optical (TO) and longitudinal-optical (LO) phonon vibrations [21] These peaks are usually present due to structural disorder produced by In-doping [22] and the presence of V O [23]. …”