Very large-scale gap distances of atmospheric pressure dielectric barrier glow discharge using semiconductor materials

Abstract

Very large-scale gap distances of atmospheric pressure dielectric barrier discharge (DBD) in glow mode are obtained through semiconductor materials. The maximum value of the gap distance is up to 70 mm. Based on the feature of the cathode sheath, Auger neutralization theory, the trapped electron and the accumulated charge in the DBD system, the secondary electron emission is one of the primary reasons for very large-scale gap distances of the DBD to produce glow discharge. Furthermore, the contribution of the effective capacitance, the gas voltage and the discharge power are also discussed. Significant for the research are the development and the practical applications of atmospheric pressure glow discharge in the DBD with very large-scale gap distances.