Very long-lived traps in bulk hydrogenated amorphous silicon

The density of states in a-Six C1-x:H and a-Cy Sn1-y:H (F) semiconducting materials has been investigated by phototheTmal deflection spectroscopy (PDS) and their photoconductive properties have been related to the gap states distribution parameters, the Urbach energy Eo and the localized states density gm. We found that an Eo of 200 meV is the highest value above which no photoconductivity can be detected. This threshold corresponds to a density of gap states of about 1019 eV−1 cm−3 for optical gaps ranging between 1.1 and 2.5eV. Fourier spectral analysis of the long photoresponse decay time observed in our fluorinated a-Cy, Sn1-y samples shows the existence of well defined trapping levels and randomly distributed defect states.

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Investigation on the Gap Density of States in Amorphous Semiconducting Carbon Silicon and Carbon Tin Alloys

Mpawenayo

Nsabimana

1987

MRS Proc.

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Very long-lived traps in bulk hydrogenated amorphous silicon

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Investigation on the Gap Density of States in Amorphous Semiconducting Carbon Silicon and Carbon Tin Alloys

Investigation on the Gap Density of States in Amorphous Semiconducting Carbon Silicon and Carbon Tin Alloys

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