Low-noise,
high-performance long-wave infrared detectors play a
crucial role in diverse applications, including in the industrial,
security, and medical fields. However, the current performance of
long-wave detectors is constrained by the noise associated with narrow
bandgaps. Therefore, exploring novel heterostructures for long-wavelength
infrared detection is advantageous for the development of compact
and high-performance infrared sensing. In this investigation, we present
a MoS2/type II superlattice mixed-dimensional van der Waals
barrier long-wave infrared detector (Mixed-vdWH). Through the design
of the valence band barrier, substantial suppression of device dark
noise is achieved, resulting in 2 orders of magnitude reduction in
dark current. The device exhibits outstanding performance, with D* reaching 4 × 1010 Jones. This integration
approach synergizes the distinctive properties of two-dimensional
layered materials (2DLM) with the well-established processing techniques
of traditional three-dimensional semiconductor materials, offering
a compelling avenue for the large-scale integration of 2DLM.