Very-low-driving-voltage electroabsorption modulators operating at 40 Gb/s

Fukano, Hideki; Yamanaka, T.; Tamura, Manabu; Kondo, Y.

doi:10.1109/jlt.2006.872310

Cited by 72 publications

(39 citation statements)

References 14 publications

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“…Two 60-μm hybrid tapers, laterally tapered in both silicon and III-V layers, are used to minimize reflection and mode mismatch loss through adiabatically transforming the optical mode. The InP cladding mesa is 4 μm wide, while the QW and separated confinement heterostructure (SCH) layers are undercut to reduce the total device capacitance [47]. In general, the EAM has a very small footprint around 100 μm, such that the device can be easily operated above 10 GHz with careful design of the active region to control the overall RC cutoff frequency.…”

Section: A Eammentioning

confidence: 99%

Hybrid Silicon Photonics for Optical Interconnects

Heck

Chen

Fang

et al. 2011

IEEE J. Select. Topics Quantum Electron.

202

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Abstract-In this paper, we review the hybrid silicon photonic integration platform and its use for optical links. In this platform, a III/V layer is bonded to a fully processed silicon-on-insulator wafer. By changing the bandgap of the III/V quantum wells (QW), lowthreshold-current lasers, high-speed modulators, and photodetectors can be fabricated operating at wavelengths of 1.55 μm. With a QW intermixing technology, these components can be integrated with each other and a complete high-speed optical interconnect can be realized on-chip. The hybrid silicon bonding and process technology are fully compatible with CMOS-processed wafers because high-temperature steps and contamination are avoided. Full wafer bonding is possible, allowing for low-cost and large-volume device fabrication.

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Section: A Eammentioning

confidence: 99%

Hybrid Silicon Photonics for Optical Interconnects

Heck

Chen

Fang

et al. 2011

IEEE J. Select. Topics Quantum Electron.

202

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“…The electro-absorption modulator (EAM) fabricated on InP is a widely used transmitter component in high bit rate optical communication systems [2]- [3]. For the intended bit-rate of 100 Gbit/s the EAM offers several advantages such as large absorption variations at low driving voltages, very small size, and mature integration with a laser.…”

Section: Introductionmentioning

confidence: 99%

Optimization of integrated electro-absorption modulated laser structures for 100 Gbit/s ethernet using electromagnetic simulation

Johansen

Kazmierski

Jany

et al. 2007

2007 SBMO/IEEE MTT-S International Microwave and Optoelectronics Conference

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Abstract-In this paper three options for very-high bit rate integrated electro-absorption modulated laser (EML) structures are investigated using electromagnetic simulation. A physics based distributed equivalent circuit model taking the slowwave propagation characteristics of the modulation signal into account is proposed for the electro-absorption modulator (EAM) electrode arrangement. This model makes it possible to apply an EM/circuit co-simulation approach to estimate the electrical to optical transmission bandwidth for the integrated EML. It is shown that a transmission bandwidth of 70 GHz seems feasible with the investigated EML structures if the driving impedance is reduced to 25 . It is also shown that the influence of electromagnetic cross-talk between components can be neglected in the estimation of the transmission bandwidth even in the case of very short separation zones. Finally, a slight decrease in transmission bandwidth is observed for an EML structure without ground pillars.

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“…This contact is important to obtain good transmission characteristic in the low frequency range and also shorts the gap between the CBCPW and the connector to reduce unexpected coupling effects. Integrated high-speed modulators are widely realized as electro-absorption modulator (EAM) in transmitters for 40Gbit/s and 100Gbit/s optical communication systems [3], [5]. They offer monolithic integration capabilities, are compact and exhibit modulation efficiency.…”

Section: Component T Echnologies For Hi Gh-speed Systemsmentioning

confidence: 99%