Very Low Pressure Magnetron Reactive Ion Etching of GaN and Al x Ga1−x N Using Dichlorofluoromethane (Halocarbon 12)

Batoni, Paolo; Patel, Kinnari N.; Burkhart, Casey C.; Shah, T. K.; Iyengar, Vikram V.; Ahrens, M.; Morton, SJ; Bobbio, Stephen M.; Stokes, E. B.

doi:10.1007/s11664-007-0199-0

Cited by 2 publications

(2 citation statements)

References 11 publications

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“…AFM roughness analysis of p-type growth without the quantum dot active layer showed only a 1.9 nm RMS roughness over a 5µm square sample area while incorporation of the quantum dots in the active layer increased the roughness value to 11.9nm. LED devices of typical size (approximately 200 microns square) were fabricated using standard methods [8,9] and tested on wafer. The additional roughness of the sample with the QD active layer is attributed to the presence of the QDs.…”

Section: Discussionmentioning

confidence: 99%

Colloidal quantum dot active layer electroluminescence in a solid GaN matrix

Pagan

Stokes²,

Patel

et al. 2005

MRS Proc.

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In this paper the preliminary results of incorporating a novel active layer into a GaN light emitting diode (LED) are discussed. Integration of colloidal CdSe quantum dots into a GaN LED active layer is demonstrated. The conductivity of the overgrowth was examined by circular transmission line method (CTLM). Effects on surface roughness due to the active layer incorporation are examined using atomic force microscopy (AFM). LED test devices were fabricated and electroluminescence was demonstrated, the devices exhibit higher turn-on voltages than would be expected for a CdSe active layer.

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Section: Discussionmentioning

confidence: 99%

Colloidal quantum dot active layer electroluminescence in a solid GaN matrix

Pagan

Stokes²,

Patel

et al. 2005

MRS Proc.

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“…Well-defined trenches with vertical sidewalls are routinely obtained when the dry-etching technique is optimized. Dry etching has been successfully implemented with plasma techniques: magnetron reactive ion etching (RIE) [7,8], ion beam etching [9][10][11], plasma etching [12][13][14], electron cyclotron resonance etching [15][16][17], RIE [18,19], inductively coupled plasma (ICP) [20,21], and ICP-RIE [22,23]. All of these may cause plasma-induced damage (PID) [24][25][26][27][28] to and contamination of the material under treatment [29].…”

Section: Dry Etchingmentioning

confidence: 99%

Selective area doping of GaN toward high-power applications

Ferreyra

Wang

et al. 2023

J. Phys. D: Appl. Phys.

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Selective area doping in GaN, especially p-type, is a critical and inevitable building block for the realization of advanced device structures for high-power applications, including, but not limited to, current-aperture vertical electron transistors (CAVETs), junction termination extensions (JTEs), junction barrier Schottky (JBS) diodes, junction field-effect transistors (JFETs), vertical-channel junction FETs (VC-JFETs), U-shaped metal–oxide–semiconductor field-effect transistors (U-MOSFETs), and Fin MOSFETs. This paper reviews and summarizes some of the recent advances in the fields of selective area etching and regrowth, ion implantation, and polarity-dependent doping that may lead to the practical realization of GaN-based power devices.

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Very Low Pressure Magnetron Reactive Ion Etching of GaN and Al x Ga1−x N Using Dichlorofluoromethane (Halocarbon 12)

Cited by 2 publications

References 11 publications

Colloidal quantum dot active layer electroluminescence in a solid GaN matrix

Colloidal quantum dot active layer electroluminescence in a solid GaN matrix

Selective area doping of GaN toward high-power applications

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