Pb(Zr 0.53 Ti 0.47 )O 3 (PZT) thin films were prepared on Pt/Ti/SiO 2 /Si substrate by sol-gel method. The effect of annealing temperature on microstructure, ferroelectric and dielectric properties of PZT films was investigated. When the films were annealed at 550-850°C, the single-phase PZT films were obtained. PZT films annealed at 650-750°C had better dielectric and ferroelectric properties. The sandwich composites with epoxy resin/PZT film with substrate/epoxy resin were prepared. The annealing temperature of PZT films influenced their damping properties, and the epoxy-based composites embedded with PZT film annealed at 700°C had the largest damping loss factor of 0.923.