Vibrational and structural properties of the 
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Abrantes, Juliana G. de; Cantarino, Marli R.; Neto, Wagner R. da Silva; Freire, Victória V.; Figueiredo, Alvaro G.; Germano, Társis M; Mounssef, Bassim; Bittar, E. M.; Leithe‐Jasper, Andreas; Garcia, F. A.

doi:10.1103/physrevmaterials.6.085403

Cited by 4 publications

(1 citation statement)

References 58 publications

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“…These guest rattler atoms in filled skutterudites and clathrates remain weakly bonded, ensuring their large amplitude of vibration. 23,285–287 The vibration of the rattler atoms itself does not act as a scattering center. Instead, it is the avoided crossing between the acoustic phonon and nearly flat soft optical phonon modes, induced by the vibration of the guest atom, that suppresses the acoustic modes further.…”

Section: Local Structure Relation To Thermal Transport In Crystalline...mentioning

confidence: 99%

Hidden structures: a driving factor to achieve low thermal conductivity and high thermoelectric performance

Sarkar,

Bhui,

Maria

et al. 2024

Chem. Soc. Rev.

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Section: Local Structure Relation To Thermal Transport In Crystalline...mentioning

confidence: 99%

Hidden structures: a driving factor to achieve low thermal conductivity and high thermoelectric performance

Sarkar,

Bhui,

Maria

et al. 2024

Chem. Soc. Rev.

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The Doping Strategies for Modulation of Transport Properties in Thermoelectric Materials

Xiong,

Han,

Wang

et al. 2024

Adv Funct Materials

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Doping is a key method employed in semiconductor technology for tuning the carrier‐density‐dependent electrical properties. In thermoelectric materials, which are typically heavily doped semiconductors, more impact factors are needed to be considered due to the heavy dose doping compared to normal semiconductors beyond carrier concentration optimization, such as band structure modification, carrier scattering mechanism and even thermal transport property. In this review, the doping effect determined by the intrinsic band features and vice versa the influence of dopants on band structure is first illustrated; and then introduce the approaches to overcoming the dilemma in effective doping caused by the temperature‐dependent optimal carrier concentration. Second, the strategies including rational vacancy design, proper selection of dopants and lattice purification toward high efficient doping and weakened carrier scattering strength are reviewed. Third, the recent discovery of the effect of dopant on thermal transport is highlighted covering the dopant‐induced local lattice distortion and exceptional strong electron‐phonon coupling. Finally, a perspective is given for the doping strategies to further boost the performance of thermoelectric materials.

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Theoretical exploration of inherent electronic, structural, mechanical, thermoelectric, and thermophysical response of KRu₄Z₁₂ (Z = As₁₂, Sb₁₂) filled skutterudite materials

Nayak,

Srivastava,

Gupta

2023

RSC Adv.

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Vibrational and structural properties of the RFe4Sb12 (R=Na, K,

Cited by 4 publications

References 58 publications

Hidden structures: a driving factor to achieve low thermal conductivity and high thermoelectric performance

Hidden structures: a driving factor to achieve low thermal conductivity and high thermoelectric performance

The Doping Strategies for Modulation of Transport Properties in Thermoelectric Materials

Theoretical exploration of inherent electronic, structural, mechanical, thermoelectric, and thermophysical response of KRu₄Z₁₂ (Z = As₁₂, Sb₁₂) filled skutterudite materials

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Vibrational and structural properties of the RFe4Sb12 (R=Na, K,

Cited by 4 publications

References 58 publications

Hidden structures: a driving factor to achieve low thermal conductivity and high thermoelectric performance

Hidden structures: a driving factor to achieve low thermal conductivity and high thermoelectric performance

The Doping Strategies for Modulation of Transport Properties in Thermoelectric Materials

Theoretical exploration of inherent electronic, structural, mechanical, thermoelectric, and thermophysical response of KRu4Z12 (Z = As12, Sb12) filled skutterudite materials

Contact Info

Product

Resources

About

Theoretical exploration of inherent electronic, structural, mechanical, thermoelectric, and thermophysical response of KRu₄Z₁₂ (Z = As₁₂, Sb₁₂) filled skutterudite materials