Vibrational properties of hydrogenated amorphous GaAs

Preparation of nano-structured InGaAs thin film by molecular beam epitaxy

“…For an identification of the corresponding vibration modes, FTIR spectra of passivated InGaAs samples are decomposed into separate line. There are four peaks at 530 cm -1 ,620 cm -1 , 700cm -1 and 990cm -1 .We assign these peaks to Ga-H-Ga Wagging, As-H wagging mode , Ga-H 2 bending and As-H 2 bending mode, respectively ,by comparison with the infrared spectra of gallium hydrides and arsenic hydrides [5,6].The results demonstrate H atoms are inserted in the GaAs with the formation of Ga-H and As-H species. The dark resistivity and photo sensitivity of f InGaAs samples are investigated with the help of microampere.…”

Production and evaluation of a-GaAs solar cells. Final technical report, August 1, 1979-July 31, 1980

“…Ts, above 40°C, even though t h e amorphous f i l m s produced a t lower Ts could be annealed a t much h i g h e r temperatures ( a t l e a s t 240°C) f o r a prolonged period without any c r y s t a l l i z a t i o n [2,3,4].…”

“…s p u t t e r e d amorphous GaAs. The measurement and d a t a reduction techniques and t h e a p p a r a t i were a l s o discussed[2,3].The r e s u l t s f o r t h e dependence of t h e e l e c t r o n i c p r o p e r t i e s on various d e p o s i t i o n parameters and post-deposition annealing treatments w i l l be b r i e f l y reviewed h e r e and a paper on t h i s s u b j e c t will be published elsewhere, I A. E f f e c t s of H-incorporation H-incorporation modifies both t h e e l e c t r i c a l and o p t i c a l p r o p e r t i e s by reducing t h e d e n s i t y of d e f e c t states. However, t h e changes a r e never a s g r e a t a s in t h e case of a-Si:H a l l o y s .…”

Effect of Hydrogenation on Structural, Optical and Electrical Properties of Amorphous InAsSb Thin Films

“…It has long been known that hydrogenation greatly reduces the optical absorption of sputtered amorphous silicon. Hydrogen is also important in amorphous III-V semiconductors [3][4][5][6][7][8][9] . Wang et al and Carbone et al find that adding H 2 to the sputtering gas shifts the optical absorptionedge to higher photon energies [4].…”