Vibrational spectra of dimethyl aluminium hydride

Grady, Andrew S.; Puntambekar, Shakher G.; Russell, David L.

doi:10.1016/0584-8539(91)80177-k

Cited by 25 publications

(17 citation statements)

References 16 publications

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“…We assumed that the H-Al stretching frequencies for top sites were the same as that of H-Al in (CH 3 ) 2 AlH, which is reported to be 1220 cm −1 . 22,23) The methods for obtaining other H-Al frequencies was the same as described above. Vibrational frequencies of -Al(CH 3 ) adsorbates were estimated from the frequencies of (CH 3 ) 3 Al using similar methods.…”

Section: Resultsmentioning

confidence: 99%

Elementary Surface Reaction Simulation of Aluminum Chemical Vapor Deposition from Dimethylaluminumhydride Based on Ab Initio Calculations: Theoretical Process Optimization Procedure (2)

Sugiyama

Nakajima

Tanaka

et al. 2000

Jpn. J. Appl. Phys.

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This work demonstrates how to develop a qualitative surface reaction model to an elementary surface reaction simulation of deposition for the quantitative examination of model validity. Chemical vapor deposition of Al (Al-CVD) from dimethylaluminumhydride (DMAH) is examined as an example of this method. The surface reaction model of DMAH was deduced from ab initio cluster model calculations and experimental measurements of reaction products. Rate constants of all the elementary reactions were estimated for an elementary reaction model. Transition-state theory enabled the calculation of rate constants using the activation energies obtained from ab initio calculations. Entropy terms, however, were estimated by using an empirical method to reduce the computational effort. This approach minimized the ab initio calculations required to form a reaction data set. Simulated deposition profiles were compared with experimental data for Al-CVD in a tube reactor. Good agreement between the results of simulations and experiments indicate the possibility of constructing surface-reaction data sets for CVD process simulations based on ab initio quantum-chemical calculations.

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Section: Resultsmentioning

confidence: 99%

Elementary Surface Reaction Simulation of Aluminum Chemical Vapor Deposition from Dimethylaluminumhydride Based on Ab Initio Calculations: Theoretical Process Optimization Procedure (2)

Sugiyama

Nakajima

Tanaka

et al. 2000

Jpn. J. Appl. Phys.

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“…The spectrum for the new bubbler matched well with the reported spectrum of DMAH. 6) The stocked bubbler contained CH 4 , TMA 7) and pentamethyldialane (PMDA) 8) which is the adduct of DMAH and TMA. The amount of CH 4 was small and was removed rapidly by bubbling.…”

Section: Introductionmentioning

confidence: 99%

Reaction Analysis of Aluminum Chemical Vapor Deposition from Dimethyl-aluminum-hydride Using Tubular Reactor and Fourier-Transform Infrared Spectroscopy: Theoretical Process Optimization Procedure (1)

Sugiyama¹,

Komiyama²,

Shimogaki³

2000

Jpn. J. Appl. Phys.

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Kinetic studies on the chemical vapor deposition (CVD) of aluminum from dimethylaluminumhydride (DMAH) were carried out to obtain the reaction model which is useful for the process optimization. Fourier-transform infrared spectroscopy (FT-IR) was used to monitor DMAH supplied to the reactor, which ensured the reliability of precursor delivery by the bubbling method. FT-IR was also used to identify the reaction product of DMAH. Aluminum deposition from DMAH yielded only trimethylaluminum (TMA). The analysis of aluminum deposition rate profile in the tubular reactor revealed that the ratelimiting step was the surface reaction of DMAH and that the surface reaction was almost of the first order with respect to DMAH concentration. The analysis took account of the monomer-dimer equilibrium of DMAH in the reactor whose existence was suggested by quantum-chemical calculations. The activation energy of approximately 80 kJ/mol was estimated from the relationship between DMAH decomposition yield and the gas residence time in the tubular reactor.

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“…The oxidized Si͑111͒ surface gives rise to a halo pattern, clearly indicating no ordered structure of the oxidized surface. The vibrational bands of DMAH have been assigned by Grady et al 20 from which our observed bands can be assigned as follows: CH 3 asymmetric ( as ) and symmetric ( s ) stretching ͑2945 and 2895 cm Ϫ1 , respec-tively͒, as ͑Al-H͒ of DMAH trimer ͑1750 cm Ϫ1 ), as ͑Al-H͒ of the dimer ͑1470, 1410, and 1340 cm Ϫ1 ; band splitting caused by Fermi resonance͒, asymmetric CH 3 deformation of the trimer and the dimer (␦ as (CH 3 ) :1445 cm Ϫ1 ), s ͑Al-H͒ of the dimer ͑1215 cm Ϫ1 ), ␦ s (CH 3 ) of the trimer and dimer ͑1190 cm Ϫ1 ), and s ͑Al-H͒ of the trimer ͑895 cm Ϫ1 ). This result reveals that the H-terminated Si͑111͒ surface maintains its lattice structure.…”

Section: A Rheed Images Of Si Surfacesmentioning

confidence: 99%

Infrared spectroscopic study of dimethylaluminum-hydride adsorption on oxidized, hydrogen-terminated, and reconstructed Si surfaces

Wadayama

Takeuchi

Mukai

et al. 2002

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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In situ attenuated total reflectance Fourier transform infrared spectroscopy of hafnium (IV) tert butoxide adsorption onto hydrogen terminated Si (100) and Si (111) Adsorption and decomposition of dimethylaluminum-hydride ͑DMAH͒ on various Si͑111͒ and Si͑100͒ surfaces ͓chemically oxidized, hydrogen-terminated, reconstructed ͑7ϫ7͒ and ͑2ϫ1͔͒ have been investigated at 90 K with a multiple reflection infrared ͑IR͒ attenuated total reflection ͑ATR͒ method. On the chemically oxidized Si͑111͒ surface, IR absorption due to DMAH increased linearly with DMAH exposure, indicating that DMAH was merely condensed on the surface. Upon DMAH exposure to the hydrogen-terminated Si͑111͒ surface, the stretch band of the surface monohydride ͑Si-H͒ diminished immediately, revealing that DMAH reacts with the terminated hydrogens. In contrast, DMAH exposure to the hydrogen terminated Si͑100͒ surface leads to a slight intensity decrease in the bands due to surface hydrides (Si-H x :xϭ1 -3). On the reconstructed Si surfaces ͓Si͑100͒(2ϫ1) and Si͑111͒͑7ϫ7͔͒, IR bands due to DMAH could not be observed during the early stage of DMAH exposure, suggesting that the reactivity of DMAH with the reconstructed surfaces is extremely high. The surface reactivity at 90 K, as judged by IR absorption intensities of the methyl and Al-H groups in DMAH, decreases in the sequence, Si͑100͒͑2ϫ1͒, Si͑111͒͑7ϫ7͒, hydrogen-terminated Si͑111͒, and hydrogen-terminated Si͑100͒.

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Vibrational spectra of dimethyl aluminium hydride

Cited by 25 publications

References 16 publications

Elementary Surface Reaction Simulation of Aluminum Chemical Vapor Deposition from Dimethylaluminumhydride Based on Ab Initio Calculations: Theoretical Process Optimization Procedure (2)

Elementary Surface Reaction Simulation of Aluminum Chemical Vapor Deposition from Dimethylaluminumhydride Based on Ab Initio Calculations: Theoretical Process Optimization Procedure (2)

Reaction Analysis of Aluminum Chemical Vapor Deposition from Dimethyl-aluminum-hydride Using Tubular Reactor and Fourier-Transform Infrared Spectroscopy: Theoretical Process Optimization Procedure (1)

Infrared spectroscopic study of dimethylaluminum-hydride adsorption on oxidized, hydrogen-terminated, and reconstructed Si surfaces

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