Vibrational Spectra of TlGaTe₂, TlInTe₂, and TlInSe₂ Layer Single Crystals

Abstract

Polarized IR‐reflection and Raman scattering spectra are obtained for TlGaTe2, TlInTe2, and TlInSe2 crystals (space group D 4h18). The IR‐reflection spectra of all the crystals show the presence of two (E ‖ c) and three (E ⟂ c) modes, which is in full agreement with the prediction of a group‐theoretical analysis. All seven Raman active modes are detected in TlInSe2. In TlGaTe2 and in TlInTe2 only three of seven Raman active modes can be observed. Normal coordinates, effective force constants, and effective charges are determined for the infra‐red active lattice vibrations.

Transport and recombination kinetics in TlGaTe2 crystals

“…Single crystals of TlInTe 2 and TlGaTe 2 compounds belonging to p ‐type semiconductors have been extensively studied as a promising material for a wide range of practical applications 1–5. TlGaTe 2 crystal is reported to exhibit switching phenomena and negative‐differential resistance effects 6, 7 that allow it to play an important role in technological applications such as memory devices.…”

DC-Electrical Properties of TlGaTe2 Single Crystals under Hydrostatic Pressure

“…It seems to be due to phase transition stimulated by high pressure. About phase transition in TlGaTe 2 at 98.5, 121 and 130 K, it was reported in [11][12][13][14] from investigation of electrical, optical, and thermal properties of these single crystals. The pressure-induced phase transition at P ≈ 0.72 GPa has been observed by us also in TlInSe 1−x S x crystals [10].…”

Prospective Application of A3B3C62 Type Semiconductors for Developing Nano-size Electronic Devices

“…We observe several absorption peaks in the THz transmission spectrum of TlInSe2 (Figure 2). Most of them could be attributed to the excitation of phonons (A2u and Bu) [1,23]. The absorption line at approximately 0.2 THz, seen only when the THz field is aligned along the nanofibers, occurs at a frequency lower than the lowest phonon one (A2u).…”