Vibrational spectroscopy of SiO on Si(111)

Klevenz, Markus; Wetzel, Steffen; Trieloff, M.; Gail, H. P.; Pucci, Annemarie

doi:10.1002/pssb.200945550

Cited by 12 publications

(14 citation statements)

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“…20 It corresponds to stretch frequencies representing the initial stages of Si oxidation on their flat counterparts. [29][30][31] The existence of this loss proves the presence of oxygen atoms on the surface, which also gets more intense with higher O 2 dosage. This peak is also clearly seen with infrared spectroscopy (see below).…”

Section: Plasmonic Excitations and Their Modificationsmentioning

confidence: 99%

“…Its vibrational energy depends slightly on oxygen coverage, as discussed in ref. 30 Because IR transmittance at normal incidence of light is sensitive only to vibrational dipoles parallel to the surface, the Si-O bonds should have a oblique orientation on the surface. The apparent increase in its intensity with increasing k , however, is not real, since it is due to the normalization of the spectra to the elastic peak at a given k .…”

Section: Plasmonic Excitations and Their Modificationsmentioning

confidence: 99%

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Plasmon Standing Waves by Oxidation of Si(553)–Au

et al. 2019

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Self-assembled Au atomic wires on stepped Si surfaces are metallic, as evidenced by a onedimensionally dispersing plasmonic excitation. Here we investigate the effects of oxidization on metallicity along such Au atomic wires on a regularly stepped Si(553) surface, by employing infrared absorption and high resolution electron energy loss spectroscopies. Our results indicate that only the Si environment undergoes oxidation, which has a remarkably small effect on the plasmon dispersion. Only close to k → 0 the plasmon dispersion ends at increasingly higher energies as a function of oxygen exposure, which is attributed to standing wave formation on small sections of Au wires generated by the introduction of O atoms as scattering centers, not to electronic gap opening. This interpretation is in full agreement with the findings by infrared spectroscopy and with low energy electron diffraction. environment of metallic chains by adsorption and in particular by oxidation.

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Section: Plasmonic Excitations and Their Modificationsmentioning

confidence: 99%

Section: Plasmonic Excitations and Their Modificationsmentioning

confidence: 99%

Plasmon Standing Waves by Oxidation of Si(553)–Au

et al. 2019

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“…A recent IR study of the SiO molecular adsorption on clean Si (111) shows a clear shift of the AS1 vibrational band due to distorted oxygen bridges at the interface. 24…”

Section: Introductionmentioning

confidence: 99%

The Temperature-Dependent Decomposition of SiO Studied by Infrared Vibrational Spectroscopy

et al. 2012

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The temperature dependence of vibrational bands in SiO films deposited onto Si was studied under ultra high vacuum conditions. In the first series of measurements, films were deposited at various substrate temperatures from 40 K to 573 K and infrared spectra were monitored in situ between 450 cm−1 and 5000 cm−1. In a second series of measurements, a film was deposited at 300 K and post-annealed to various temperatures ranging from 373 K to 1173 K. A shift of the strongest vibrational frequency of SiO by several 10 cm−1 to higher wavenumbers with increasing temperature was observed in both kinds of experiments. The observed spectral shifts are considered as an indication of changes in the frequency of occurrence of the various Si-SiyO4-y units (0 ⩽ y ⩽ 4).

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“…The much weaker structure at approximately 715 cm −1 corresponds to the Si stretching mode, a mode with dominating Si displacement (Lehmann et al 1983), sometimes called "bending" mode in the literature. It is important to note that already from 1 nm the IR spectral features of the evaporated SiO films no longer change (Klevenz et al 2010b). Accordingly, the IR dielectric function of the evaporated film already resembles that of bulk SiO (Hjortsberg & Granqvist 1980;Tazawa et al 2006;Klevenz et al 2010a).…”

Section: Resultsmentioning

confidence: 97%

Laboratory measurement of optical constants of solid SiO and application to circumstellar dust

Wetzel

Klevenz

Gail

et al. 2013

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Context. Silicate minerals belong to the most abundant solids that form in cosmic environments. Their formation requires that a sufficient number of oxygen atoms per silicon atom are freely available. For the standard cosmic element mixture this can usually be taken for granted, but it becomes a problem at the transition from the oxygen-rich chemistry of M-stars to the carbon-rich chemistry of C-stars. In the intermediate type S-stars, most of the oxygen and carbon is consumed by formation of CO and SiO molecules, and left-over oxygen to build SiO 4 -tetrahedrons in solids becomes scarce. Under such conditions SiO molecules from the gas phase may condense into solid SiO. The infrared absorption spectrum of solid SiO differs from that of normal silicates by the absence of Si-O-Si bending modes around 18 μm whereas the absorption band due to Si-O bond stretching modes at about 10 μm is present. Observations show that exactly this particular characteristic can be found in some S-star spectra. Aims. We demonstrate that this observation may be explained by the formation of solid SiO as a major dust component at C/O abundance ratios close to unity. Methods. The infrared absorption properties of solid SiO are determined by laboratory transmission measurements of thin films of SiO produced by vapour deposition on a Si(111) wafer in the range between 100 cm −1 and 5000 cm −1 (2 μm and 100 μm). From the measured spectra the dielectric function of SiO is derived by using a Brendel-oscillator model, particularly suited to the representation of optical properties of amorphous materials. The results are used in model calculations of radiative transfer in circumstellar dust shells with solid SiO dust in order to determine the spectral features due to SiO dust. Results. Comparison of synthetic and observed spectra shows that reasonable agreement is obtained between the main spectral characteristics of emission bands due to solid silicon monoxide and an emission band centred on 10 μm, but without the accompanying 18μm band, observed in some S-stars. We propose that solid SiO is the carrier material of this 10 μm spectral feature.

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Vibrational spectroscopy of SiO on Si(111)

Cited by 12 publications

References 40 publications

Plasmon Standing Waves by Oxidation of Si(553)–Au

Plasmon Standing Waves by Oxidation of Si(553)–Au

The Temperature-Dependent Decomposition of SiO Studied by Infrared Vibrational Spectroscopy

Laboratory measurement of optical constants of solid SiO and application to circumstellar dust

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