Vibrational studies of copper thiogallate solid solutions

Julien, C.; Barnier, S.; Ivanov, Ivan Gueorguiev; Guittard, M.; Pardo, M.P.; Chilouet, A.

doi:10.1016/s0921-5107(98)00418-8

Cited by 33 publications

(19 citation statements)

References 24 publications

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“…32 The lines centered appearing at 364 cm −1 and 386 cm −1 have been ascribed to B 2 (LO) and E mode corresponding to the high-frequency band determined by the vibrations of the Ga-S bond. 33 The lines centered appearing at 73 cm −1 , 94 cm −1 , 115 cm −1 , 164 cm −1 and 275 cm −1 have been ascribed to E mode, B 2 mode, B 1 mode and E mode resulting from the bond vibrations of Cu-S. The Raman spectrum of sample (a) shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Double Pulse Electrodeposition of Cu-Ga Precursor Layer for CuGaS₂Solar Energy Thin Film

Wang

Yang

et al. 2013

J. Electrochem. Soc.

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A novel technique for synthesis of CuGaS 2 solar energy thin film is presented. It is associated with double pulse electrodeposition of Cu-Ga precursor layer followed by thermal annealing treatment in sulfur atmosphere. The influence of several flexible parameters including pulse deposition potential and agitation rate on the compositions, crystal structure and morphology of the films were investigated. A relative negative shift of the higher pulse deposition potential results in the increasement of Ga content. A higher agitation rate results in higher Cu/Ga ratio and the emergence of CuS secondary phase after annealing in sulfur atmosphere. The crystal size increases with decreasing the higher pulse deposition potential. Several characterization methods including X-ray diffraction (XRD), scanning electron microscope (SEM), energy diffraction spectrum (EDS), ultraviolet-visible (UV-vis) spectra, impedance spectroscopy, and Raman spectrum are used to characterize the synthesized CuGaS 2 polycrystalline thin films. Based on the experimental results, a probable formation mechanism of the CuGaS 2 thin films was proposed and briefly discussed.The broad bandgap and high absorption coefficient offered by the chalcopyrite semiconductor materials make them attracting considerable attention on application in photovoltaic solar cells, 1 light emitting diodes, 2 hydrogen production, 3 and various nonlinear optical devices. 4 Solar cells based on polycrystalline Cu(In,Ga)Se 2 absorber layers have demonstrated the highest power conversion efficiencies of up to 20.3% in laboratory among the thin film technology. 5 However, a toxic selenium gas treatment limited large scale production. Many studies were presently focused on the exploration of chalcogenide compounds Cu(In,Ga)S 2 based solar cells which have reached a limited efficiency of below 13%. 6 For a further promotion on conversion efficiency, tandem solar cell structures are currently subject of intensive research. The ternary compound CuGaS 2 as a member of the chalcopyrite family has a bandgap energy (Eg) of around 2.45 eV and has been considered as a promising material for high efficiency tandem solar cells. 7 It also bears perspectives as a Cd-free window material for Cu(In 1−x Ga x )Se 2 type solar cell. 8 Meanwhile, it possesses a bandgap close to the optimum for the realization of a thin-film intermediate-band solar cell (IBSC), theoretically able to reach value of energy conversion efficiency above 46% under sun irradiation. 9 Numerous approaches developed for the fabrication of CuGaS 2 , such as metal-organic chemical vapor deposition, 10 modulated flux deposition, 11 vacuum evaporation 12,13 and molecular beam epitaxy, 14 are not suitable for large-scale production due to the expensive cost. Electrodeposition method is an appealing technique that offers lowcost equipment, efficient material utilization and scalability for largescale deposition, and has widely been employed for the deposition of elemental, binary, ternary or even more complex compound thin films....

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Section: Resultsmentioning

confidence: 99%

Double Pulse Electrodeposition of Cu-Ga Precursor Layer for CuGaS₂Solar Energy Thin Film

Wang

Yang

et al. 2013

J. Electrochem. Soc.

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“…There are about five Raman peak features, at A ′ ∼ 119 cm –1 , A 1 ∼ 156 cm –1 , A 1 ∼ 190 cm –1 , A ′ ∼ 240 cm –1 , and F 2 ∼ 289 cm –1 , that can be detected in the α-Ga 2 Se 3 microcrystal, similar to previous ordered Ga 2 Se 3 . 38 Most of the mode frequencies are indexed to the internal and external vibrations of the tetrahedral GaSe 4 groups 39 in the zincblende Ga 2 Se 3 . In the defect semiconductors of Ga 2 X 3 (X = S, Se), even Ga 2 S 3 is crystallized in a defect wurtzite structure (β), 27 and 1/3 Ga vacancies are still ordered in the Ga 2 X 3 lattice similar to that of α-Ga 2 Se 3 .…”

Section: Resultsmentioning

confidence: 99%

Ga₂Se₃ Defect Semiconductors: The Study of Direct Band Edge and Optical Properties

2020

ACS Omega

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Direct band edge is a crucial factor for a functional chalcogenide to be applied in luminescence devices, photodetectors, and solar-energy devices. In this work, the room-temperature band-edge emission of III–VI Ga 2 Se 3 has been first observed by micro-photoluminescence (μPL) measurement. The emission peak is at 1.85 eV, which matches well with the band-edge transition that is measured by micro-thermoreflectance (μTR) and micro-transmittance (μTransmittance) for verification of the direct band edge of Ga 2 Se 3 . The temperature-dependent μTR spectra of Ga 2 Se 3 show a general semiconductor behavior with its temperature-energy shift following Varshni-type variation. With the well-evident direct band edge, the peak responsivities of photovoltaic response (∼6.2 mV/μW) and photocurrent (∼2.25 μA/μW at f = 30 Hz) of defect zincblende Ga 2 Se 3 can be, respectively, detected at ∼2.22 and ∼1.92 eV from a Cu/Ga 2 Se 3 Schottky solar cell and a Ga 2 Se 3 photoconductor. On the basis of experimental analysis, the optical band edge and photoresponsivity properties of a III–VI Ga 2 Se 3 defect semiconductor are thus realized.

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“…Raman spectra of the commercial Ga 2 S 3 (blue traces in Figures (b) and (c)) are consistent with crystalline Ga 2 S 3 The dominant peaks at 233 and 386 cm −1 are due to the ν 4 and ν 1 modes of the GaS 4 molecular unit, respectively. In addition, the features at 114, 140, 147, 307, 329, 340, 350, and 422 cm −1 are also characteristic of crystalline Ga 2 S 3 . Raman spectra of the SWCNT‐GaS x composite (Red traces in Figures b,c) show all of the peaks present in the SWCNT spectrum, and new peaks appearing at ≈150, 165, 175, 220, 310, and 385 cm −1 .…”

Section: Resultsmentioning

confidence: 92%

Gallium Sulfide–Single‐Walled Carbon Nanotube Composites: High‐Performance Anodes for Lithium‐Ion Batteries

Meng

et al. 2014

Adv Funct Materials

108

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Vibrational studies of copper thiogallate solid solutions

Cited by 33 publications

References 24 publications

Double Pulse Electrodeposition of Cu-Ga Precursor Layer for CuGaS₂Solar Energy Thin Film

Double Pulse Electrodeposition of Cu-Ga Precursor Layer for CuGaS₂Solar Energy Thin Film

Ga₂Se₃ Defect Semiconductors: The Study of Direct Band Edge and Optical Properties

Gallium Sulfide–Single‐Walled Carbon Nanotube Composites: High‐Performance Anodes for Lithium‐Ion Batteries

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Vibrational studies of copper thiogallate solid solutions

Cited by 33 publications

References 24 publications

Double Pulse Electrodeposition of Cu-Ga Precursor Layer for CuGaS2Solar Energy Thin Film

Double Pulse Electrodeposition of Cu-Ga Precursor Layer for CuGaS2Solar Energy Thin Film

Ga2Se3 Defect Semiconductors: The Study of Direct Band Edge and Optical Properties

Gallium Sulfide–Single‐Walled Carbon Nanotube Composites: High‐Performance Anodes for Lithium‐Ion Batteries

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Double Pulse Electrodeposition of Cu-Ga Precursor Layer for CuGaS₂Solar Energy Thin Film

Double Pulse Electrodeposition of Cu-Ga Precursor Layer for CuGaS₂Solar Energy Thin Film

Ga₂Se₃ Defect Semiconductors: The Study of Direct Band Edge and Optical Properties