VIISta 900 3D: Advanced medium current implanter

Sinclair, F.; Olson, Joe; Rodier, Dennis; Eidukonis, Alex; Thanigaivelan, Thirumal; Todorov, S.S.

doi:10.1109/iit.2014.6940037

Cited by 4 publications

(2 citation statements)

References 3 publications

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“…As the size of wafer increases, device manufacturers are using 300 mm substrates and adopting single devices wafer tools to fabricate semiconductors, which puts forward the requirement for the extraction area and beam shape of the PFG [19,20]. As mentioned before, the PFG is positioned near the wafer, which means that the metal contaminants (like tungsten, tantalum, molybdenum, aluminum, iron, etc.)…”

Section: Plasma Electrodementioning

confidence: 99%

Improvement of miniaturized 2.45 GHz ECR plasma flood gun at PKU

Cui,

Peng,

et al. 2023

J. Inst.

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In an ion implanter, plasma flood gun (PFG) is used to provide electrons to neutralize the accumulated charge on the wafer surface to avoid breakdown damage. With the development of ion implantation technology, four key requirements have been put forward for PFG. They are simple structure, plasma with high density and low electron temperature, no metal contamination and long life. The existing PFG, such as the filament type PFG, can hardly meet the above requirements at the same time. 2.45 GHz ECR ion source with the advantages of high beam density, high stability, long life time and no filament metal contamination, has shown great potential to work as PFG. Recently, a miniaturized 2.45 GHz permanent magnet electron cyclotron resonance PFG (PMECR-PFG) has been developed at Peking University (PKU). In our previous test, 8.8 mA electron extraction current was obtained with argon gas. In this work, by optimizing the magnetic field configuration to a resonant configuration, the performance of this ECR-PFG was greatly improved. With 100 W microwave power, an 80 mA electron current load was obtained under the extraction voltage of 0.1 kV. To minimize the metal contamination, a three-slit graphite plasma electrode was fabricated and a 50 mA load was generated at only 30 W RF power. During all tests, the gas consumption rate is lower than 0.6 sccm, which is beneficial to maintain the vacuum of implanter beamline.

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Section: Plasma Electrodementioning

confidence: 99%

Improvement of miniaturized 2.45 GHz ECR plasma flood gun at PKU

Cui,

Peng,

et al. 2023

J. Inst.

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“…The residual gases are deposited inside the bushing and source chamber, which operate at relatively low temperatures. [3] This gas deposition can lead to the formation of residue layers, and this drops an implantation voltage in an ion source. Such a potential drop causes an electrical short circuit and is involved in the arc formation leading to thermionic production.…”

Section: Introductionmentioning

confidence: 99%

Comparison of experiments and simulation data through the installation of an internal heating tube in a bushing

Shin,

Ryu,

Hwang

et al. 2024

Preprint

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This study aims to enhance the ion implanter performance by developing an innovative heating tube integrated within the bushing to improve temperature control. Gases such as PH3, AsH3, BF3, and GeF4 are ionized applying a high voltage of up to 80 kV in ion implanters. An ion beam is extracted from an electrode. Residual gases tend to be deposited inside the bushing when a bushing is operated at relatively low temperatures. The leakage current flows through the bushing owing to the deposited residual gas layer. This results in arcing due to potential differences. To address this issue, our approach involves designing and implementing a heating tube within the bushing, accompanied by the injection of a heating liquid to raise the temperature. The proposed heating system aims to prevent gas deposition and enhance the efficiency of the deposition process. The effectiveness of this solution is evaluated through a combination of experiments and simulations using a computational fluid dynamics software. Experimental results agree well with those of the simulation. Through these integrated experimental and simulation studies, we anticipate a significant enhancement in deposition process efficiency. The findings contribute valuable insights into optimizing ion implanter performance and reducing the need for frequent bushing replacements.

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