1993
DOI: 10.1063/1.355031
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Viscosity and elastic constants of amorphous Si and Ge

Abstract: The biaxial modulus and coefficient of thermal expansion of ion-beam-sputtered amorphous Si and Ge thin films were determined from curvature changes induced by differential thermal expansion. Viscous flow was measured by stress relaxation and was found to be Newtonian. The viscosity increased linearly with time as a result of structural relaxation, and its isoconfigurational activation enthalpy was 1.8 rtO.3 and 2.6* 1.3 eV for amorphous Si and Ge, respectively. An atomistic model, based on a chain reaction of… Show more

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Cited by 114 publications
(69 citation statements)
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“…(2). However, based on the work of Witvrouw and Spaepen [5], we know that the stress in the amorphous layer will tend towards zero because the film can easily relax in the direction normal to the surface. Using their parameters for the temperature and time dependence of the viscosity of amorphous Si, we find that this relaxation should take place over a time scale on the order of the anneal time under load.…”
Section: Methodsmentioning
confidence: 99%
“…(2). However, based on the work of Witvrouw and Spaepen [5], we know that the stress in the amorphous layer will tend towards zero because the film can easily relax in the direction normal to the surface. Using their parameters for the temperature and time dependence of the viscosity of amorphous Si, we find that this relaxation should take place over a time scale on the order of the anneal time under load.…”
Section: Methodsmentioning
confidence: 99%
“…The coefficient of thermal expansion ␣ f and the biaxial modulus E f /(1Ϫ f ) can be determined simultaneously, since the temperature dependence on the stress, for the same film deposited on two different substrates is known. They can be readily obtained by solving two equations 5,15,16,19,20 of the form given in Eq. ͑2͒, or by plotting two E f /(1Ϫ f ) vs ␣ f curves to find their intersection.…”
Section: B Coefficient Of Thermal Expansion and Biaxial Modulus Measmentioning
confidence: 99%
“…For example, using nanoindentation and Brillouin scattering, Jiang et al determined E and separately for a-C:H ͑Ref. 8͒ and a-Si:H. 9 The CTEs of a-Si:H, 15 16 Al, 21 and Cr, 22 have been obtained using a technique, thermally induced bending ͑TIB͒, based on the determination of the curvature of the filmϩsubstrate composite as a function of temperature. Recently, x-ray diffraction 23 and dilatometry 24 have also been used to determine the thermal expansion coefficients of some metallic films.…”
Section: Introductionmentioning
confidence: 99%
“…It is based on the ability of amorphous Si or amorphous Si 1-x Ge x to plastically accommodate deformation during implantation and anneal. 9,12 During the last stage of the ion implantation and during the first stage of anneal, the crystal seed can be considered as a composite made of crystalline Si 1-x Ge x particles in an amorphous matrix as indicated by Figures 3a-3c. These particles are in compression as shown in Figure 4a.…”
Section: Stem Characterizations After Ion Implantation Are Presented Inmentioning
confidence: 99%