2018
DOI: 10.1063/1.5020763
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Viscous electron flow in mesoscopic two-dimensional electron gas

Abstract: We report electrical and magneto transport measurements in mesoscopic size, two-dimensional (2D) electron gas in a GaAs quantum well. Remarkably, we find that the probe configuration and sample geometry strongly affects the temperature evolution of local resistance. We attribute all transport properties to the presence of hydrodynamic effects. Experimental results confirm the theoretically predicted significance of viscous flow in mesoscopic devices.

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Cited by 109 publications
(95 citation statements)
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“…At the same time investigating charge transport in the buried electron gas on a microscopic level is cumbersome. Therefore little is known about the electrons microscopic behavior and there are surprises like the strongly viscous behavior of charge carriers in high-mobility electron systems [1][2][3][4].…”
Section: Introduction To Branched Electron Flow and Scanning Gate Micmentioning
confidence: 99%
“…At the same time investigating charge transport in the buried electron gas on a microscopic level is cumbersome. Therefore little is known about the electrons microscopic behavior and there are surprises like the strongly viscous behavior of charge carriers in high-mobility electron systems [1][2][3][4].…”
Section: Introduction To Branched Electron Flow and Scanning Gate Micmentioning
confidence: 99%
“…Transport in metals is usually dominated by MR scattering which results in a diffusive Ohmic regime. A novel hydrodynamic regime with collective fluid-like behavior, found in graphene [24][25][26][27], (Ga,Al)As [28][29][30] and other select materials [31][32][33][34], can arise when MR scattering is weak and MC scattering is strong. We show that the transition from an Ohmic to a hydrodynamic regime can be readily tuned to occur through the fluctuation-dominated ballistic regime, realizing a QCP-mediated nonequilibrium transition.…”
mentioning
confidence: 99%
“…Historically such metals did not exist: in a Fermi liquid, the electron-impurity scattering rate is always faster as temperature T → 0, and at higher T usually an umklapp process (off electrons or phonons) is sufficient to relax the electronic momentum. Nevertheless, experiments have increasingly discovered evidence for this hydrodynamic flow regime in clean samples of graphene, GaAs, and other compounds, in recent years [2,3,4,5,6,7,8,9]; see [10] for a review.…”
Section: Introductionmentioning
confidence: 99%