Visible‐Color‐Tunable Light‐Emitting Diodes

Hong, Young June; Lee, Chul‐Ho; Yoon, Aram; Kim, Miyoung; Seong, Han Kyu; Chung, Hun Jae; Sone, Cheolsoo; Park, Yong Jo; Yi, Gyu Chul

doi:10.1002/adma.201100806

Cited by 287 publications

(266 citation statements)

References 30 publications

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“…This is corroborated by the findings of Fichtenbaum et al 132 Recently, Hong et al reported a visible-color tunable LED with core-shell GaN nanorod arrays. 134 The GaN nanorod arrays were grown on patterned SiO 2 /n þ GaN/sapphire templates. Then, the InGaN/GaN MQWs and p-GaN were overgrown on the GaN nanorod arrays.…”

Section: B Bottom Up Axial Nanoledsmentioning

confidence: 99%

GaN based nanorods for solid state lighting

Li¹,

Waag

2012

Journal of Applied Physics

495

394

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In recent years, GaN nanorods are emerging as a very promising novel route toward devices for nano-optoelectronics and nano-photonics. In particular, core-shell light emitting devices are thought to be a breakthrough development in solid state lighting, nanorod based LEDs have many potential advantages as compared to their 2 D thin film counterparts. In this paper, we review the recent developments of GaN nanorod growth, characterization, and related device applications based on GaN nanorods. The initial work on GaN nanorod growth focused on catalyst-assisted and catalyst-free statistical growth. The growth condition and growth mechanisms were extensively investigated and discussed. Doping of GaN nanorods, especially p-doping, was found to significantly influence the morphology of GaN nanorods. The large surface of 3 D GaN nanorods induces new optical and electrical properties, which normally can be neglected in layered structures. Recently, more controlled selective area growth of GaN nanorods was realized using patterned substrates both by metalorganic chemical vapor deposition (MOCVD) and by molecular beam epitaxy (MBE). Advanced structures, for example, photonic crystals and DBRs are meanwhile integrated in GaN nanorod structures. Based on the work of growth and characterization of GaN nanorods, GaN nanoLEDs were reported by several groups with different growth and processing methods. Core/shell nanoLED structures were also demonstrated, which could be potentially useful for future high efficient LED structures. In this paper, we will discuss recent developments in GaN nanorod technology, focusing on the potential advantages, but also discussing problems and open questions, which may impose obstacles during the future development of a GaN nanorod based LED technology.

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Section: B Bottom Up Axial Nanoledsmentioning

confidence: 99%

GaN based nanorods for solid state lighting

Li¹,

Waag

2012

Journal of Applied Physics

495

394

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“…20,21 In addition, a major challenge remains in the vdW epitaxy of semiconductors on hBN: precise control of the position, size and shape of the semiconductor nanostructures, all of which are critical for monolithic microelectronic processing. [22][23][24][25][26] In this article, we report on the maskless shape-controlled vdW heteroepitaxy of ZnO nanostructures on hBN substrates in a designed manner using the artificially formed atomic ledges on hBN. Electron microscopic analyses and first-principles theoretical calculations exhibit how the highly lattice-mismatched ZnO/hBN heterojunction is fabricated to be of high quality using vdW epitaxy.…”

Section: Introductionmentioning

confidence: 99%

Architectured van der Waals epitaxy of ZnO nanostructures on hexagonal BN

Hong

Kim

et al. 2014

NPG Asia Mater

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Heteroepitaxy of semiconductors on two-dimensional (2-d) atomic layered materials enables the use of flexible and transferable inorganic electronic and optoelectronic devices in various applications. Herein, we report the shape-and morphology-controlled van der Waals (vdW) epitaxy of ZnO nanostructures on hexagonal boron nitride (hBN) insulating layers for an architectured semiconductor integration on the 2-d layered materials. The vdW surface feature of the 2-d nanomaterials, because of the surface free of dangling bonds, typically results in low-density random nucleation-growth in the vdW epitaxy. The difficulty in controlling the nucleation sites was resolved by artificially formed atomic ledges prepared on hBN substrates, which promoted the preferential vdW nucleation-growth of ZnO specifically along the designed ledges. Electron microscopy revealed crystallographically domain-aligned incommensurate vdW heteroepitaxial relationships, even though ZnO/hBN is highly latticemismatched. First-principles theoretical calculations confirmed the weakly bound, noncovalent binding feature of the ZnO/hBN heterostructure. Electrical characterizations of the ZnO nanowall networks grown on hBN revealed the excellent electrical insulation properties of hBN substrates. An ultraviolet photoconductor device using the vdW epitaxial ZnO nanowall networks/ hBN heterostructure was further demonstrated as an example of hBN substrate-based device applications. The architectured heteroepitaxy of semiconductors on hBN is thus expected to create many other device arrays that can be integrated on a piece of substrate with good electrical insulation for use in individual device operation.

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“…The TEM/STEM clearly show significantly large differences in the QW and QB thickness on different growth facets, which may be a result of the anisotropic surface formation energies of GaN crystal planes that are known to influence the diffusion of adatoms. 15,[53][54] The nanorods scratched off for the CL analysis were investigated by STEM as shown in Fig. 5d-e.…”

Section: Resultsmentioning

confidence: 99%

“…[11][12][13] These dislocation free GaN nanostructures are also reported to increase light extraction efficiency and enlarge the light emitting surface. [14][15][16] Additionally moving from bulk to nanoscale provides many new optical properties [17][18] bridging the green gap.…”

Section: Introductionmentioning

confidence: 99%

Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods

Conroy¹,

Kusch

et al. 2016

Nanoscale

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We report a method of growing site controlled InGaN multiple quantum discs (QDs) at uniform wafer scale on coalescence free ultra-high density (>80%) nanorod templates by metal organic chemical vapour deposition (MOCVD). The dislocation and coalescence free nature of the GaN space filling nanorod arrays eliminates the well-known emission problems seen in InGaN based visible light sources that these types of crystallographic defects cause. Correlative scanning transmission electron microscopy (STEM), energy-dispersive X-ray (EDX) mapping and cathodoluminescence (CL) hyperspectral imaging illustrates the controlled site selection of the red, yellow and green (RYG) emission at these nano tips. This article reveals that the nanorod tips' broad emission in the RYG visible range is in fact achieved by manipulating the InGaN QD's confinement dimensions, rather than significantly increasing the In%. This article details the easily controlled method of manipulating the QDs dimensions producing high crystal quality InGaN without complicated growth conditions needed for strain relaxation and alloy compositional changes seen for bulk planar GaN templates

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Visible‐Color‐Tunable Light‐Emitting Diodes

Cited by 287 publications

References 30 publications

GaN based nanorods for solid state lighting

GaN based nanorods for solid state lighting

Architectured van der Waals epitaxy of ZnO nanostructures on hexagonal BN

Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods

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